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The optical waveguide from the structure is wrapped in a high refractive index area is a region of low refractive index, it can be light confinement spread within a smaller area in order to improve the optical density, which ensures better utilization of the non-line of the nonlinear crystal The nature of, or reduce the pump threshold of the laser material. The integrated optical waveguide is the basic unit, is also the basis of the all-optical network transmission, its unique performance, high integration and scale production of low cost, plays in the manufacture of various optical devices and the field of modern optical communication. an extremely important role. In recent years, the research on the waveguide laser has also become a hot spot on the laser crystal, but it is the only way is to form a waveguide structure. Therefore, researchers have been exploring effective way to preparation of the excellent performance of the optical waveguide. Preparation waveguide diffusion, exchange, thin film deposition, ion implantation, ion implantation technology as a mature technology of surface modification of materials, caused widespread concern. So far, it has been using the ion implantation technique to form a large number of optical materials including optical crystal, glass, semiconductors, and organic polymer optical waveguide structure, made important progress, ion implantation technology has become fabricate waveguides effective means. For ion implantation, the optical waveguide is formed by optical crystal (especially obvious birefringent properties of the crystal), due to the injection of ion atomic mass differences, light ion implantation with heavy ion implantation to form a waveguide has a significantly different. The light ion implantation after the optical crystal, the end of the range because the deposition of the implanted ions and form a refractive index lowering region and the formation of the barrier type waveguide. This waveguide rely mainly on a light degree barrier and air optical waveguide structure. The light ion implantation a major problem, however, is the higher implantation dose of the waveguide is formed, usually in the 10 16 ions / cm 2 , which greatly increases the cost. Heavy ion implantation with light ion implantation, heavy ion implantation crystal material in the range of its ion within the crystal lattice caused by disturbance, resulting in the decrease of the crystal birefringence properties, so that the injection zone a lower refractive index increased, and therefore the waveguide is mainly dependent on The increase in the refractive index of the material surface layers, and the formation of waveguides having a directivity. In addition, this method has a shorter injection time, low-dose (~ 10 14 ions / cm 2 ), and low cost. keV ion implantation is an already doped widely used in the semiconductor technology, it MeV ion implantation compared with injected beam, cheap, etc., and which is formed of a waveguide structure with MeV ion implantation compared with smaller size. KeV ion implantation to form the optical waveguide can be reduced cost, is more conducive to large-scale industrial production of ion implantation of the optical waveguide. This paper studies the use of ion implantation in neodymium-doped calcium-niobium-gallium garnet crystal (Nd: Ca 3 Nb 1.5 Ga 3.5 O the 12 , Nd: CNGG), near-stoichiometric lithium niobate (Stoichiometric LiNbO 3 , SLN), bismuth titanate (Bi 12 TiO 20 , formed BTO) crystal materials, optical waveguides, optical waveguide of the waveguide mode and annealing behavior, face coupling method to test the optical waveguide near-field intensity distribution, optimize ion injected into the optical waveguide formation conditions; using steady-state fluorescence spectrometer measurement of photoluminescence (PL) spectrum of some samples; using UV - visible - near infrared spectrophotometer test part of the sample through the spectrum and the absorption spectrum; using crystal damage caused by SRIM2006 program to simulate the injection process of ion implantation, ion implantation, the formation mechanism of the waveguide. The main results are as follows: neodymium-doped calcium-niobium-gallium garnet (Nd: Ca3Nb 1.5 Ga 3.5 O 12 , Nd: CNGG) crystal belong to a crystal system of Nd: YAG, compared absorption lines large widening of the fluorescence spectra appear inhomogeneous broadening, so that the the Nd: CNGG laser exhibit inhomogeneous broadening characteristics. Emission wavelength region of the crystals in the 800nm ??laser diode with a wide absorption band, so it is suitable for a laser diode pumped solid-state laser diode pumped lasers do sake. We energy of 500keV, a dose of 2 × 10 16 ions / cm 2 of He ions are implanted into the Nd: CNGG crystal form a planar light waveguide. RCM fitting waveguide region's refractive index distribution shape the SRIM fitting nuclear energy damage distribution anastomosis better described nuclear energy loss is the main reason for forming a refractive index of waveguide region barrier. FS920 steady-state fluorescence spectrometer of unimplanted Nd: CNGG with the injection of He ions Nd: CNGG sample measurement of photoluminescence (PL) spectrum. In addition, we used the same method of injection O H Nd: CNGG sample studied. Lithium niobate is an important multifunctional optical crystal. It has excellent nonlinear optical properties and electro-optical properties, has now become an important integrated optoelectronics materials. We usually referred lithium niobate crystals, such as special instructions are the same ingredients niobate, lithium (CLN), Li / Nb ratio of about 48.4/51.6 affect the optical properties due to the lack of Li ions lead to vacancy defects. Near-stoichiometric lithium niobate (SLN) to improve the Li / Nb ratio so that it is close to 1:1, compared with CLN improve the performance parameters of lithium niobate. 4.5MeV O ions, dose 6 × 10 14 ions / cm 2 , injection z cut SLN crystals, the formation of planar optical waveguide structures, measuring the polarization of the waveguide The characteristics of the end face of the coupling method measured the planar waveguide near-field intensity distribution, SRIM simulated numerical analysis on the causes of the waveguide. BMO (M for Si, Ge, Ti) crystals belong to the soft bismuthinite structure, excellent performance photorefractive crystals. Bismuth titanate Bi 12 the TiO 20 (BTO) crystal and it is the same type bismuth crystal silicate of Bi 12 SiO 20 (BSO), germanium acid Bi of Bi the, GeO , 12 20 (BGO) is a promising photorefractive material. They have many similarities, have cubic I23 point group symmetry, are paraelectric phase crystals are optically isotropic, piezoelectric and acousto-optic effect, the coefficient of the electro-optic effect and superior optical performance, real-time dynamic holographic recording their high sensitivity, fast response, holographic recording materials are good. Them, BTO superior in many performance, such as: optical rotation, electro-optic coefficient, the high sensitivity of the red light district, BTO crystal is a promising light photorefractive holographic recording materials. BTO crystal with energy 4.5MeV, dose 6 × 10 14 ions / cm 2 of oxygen ion implantation to form a planar optical waveguide, using a prism coupling method tested the waveguide models in the dark before and after annealing, using the end face coupling system and measuring the light intensity distribution of the near field of the waveguide.
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