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The Formation of InP Micro-and Nano-structure by Electrochemical Etching

Author: YuXinYu
Tutor: ZhaoXinLe；WengZhanKun
School: Changchun University of Science and Technology
Course: Biomedical Engineering
Keywords: Porous InP Electrochemical etching SEM
CLC: O614.372
Type: Master's thesis
Year: 2009
Downloads: 40
Quote: 0
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Abstract


The electrochemical etching technique is a cheap and simple method to fabricate the porous semiconductor materials. Over the past several decade, most of efforts were concentrated on the formation and mechanism of porous Si. From porous Si exhibit photoluminescence at room temperature, lots of researchers have been attracted by porous compound semiconductors due to properties which have some same application to silicon . In addition, the mechanism of the reaction and the formation of the porous structure are unclear. Moreover, the mechanism of porous III - V compound semiconductors is in exploration.We choose InP act as our study object. We select neutral NaCl solution act as electrolyte and use constant current .Then we obtain different structure at different conditions .The sample is characterized by SEM . And then the mechanism of the reaction is discussed .We obtain orderly array structure at appropriate conditions. At the top of sample, the structure similar to three dimensional ,at the bottom of the sample, the wall of the porous is straight and smooth. The result of the XRD is that InP is single crystal before and after etching. So we considered current burst lead to the formation of porous. We use polishing and acid rust to remove the dendrites irregular layer. At the end ,we fabricate micro-tip on the surface of InP.

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CLC: > Mathematical sciences and chemical > Chemistry > Inorganic Chemistry > Metal elements and their compounds > Section III group metal elements and their compounds > The gallium Vice family ( Ⅲ A group metal elements ) > Indium In
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