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Study on Thermal Packaging for High Power LED

Author: WangYaoMing
Tutor: WangDeMiao;JinHao
School: Zhejiang University
Course: Electronic Science and Technology
Keywords: LED thermal resistent micro-scale film
CLC: TN312.8
Type: Master's thesis
Year: 2010
Downloads: 830
Quote: 2
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Abstract


High-power LED is an electro-luminescent semiconductor devices, popularly applied in solid-state lighting and display areas. Compared with traditional lighting source, LED has many advantages, such as good to environment ,energy-saving, long life-time, faster response, low driving voltage, easy to use and so on. However, with the power increasing , heat dissipation become a particularly problem. At home and abroad, in experts’ opinion,how to deal with heat managment for LED is a key technologies. Many production companies and institut have adopt different measures to solve this problem, but all this methods has its disadvantages: heat sink series too much and thermal resistance too huge. In this paper, under the guidance of tutor, we get some conclusions:1. Under the conditions :aluminum size of 15mm×15mm, air convection coefficient :10 W / (m2·K) , LED chip: LXHL-BW01(1.2W) . ANSYS simulation test results show that the the thermal resistance of only 34K / W when using with the integrated packaging, much less than 61 K/ W(PCB packaging). Able to maintain the smallest working silicon aluminum radiator area of about 11mm×11mm that is 121 mm2, chip, this time the maximum temperature 110℃. As the area increases, work to reduce the temperature of the chip, using the size of 15mm×15mm size is more optimized.2. From the perspective of an enabling business-oriented, considering the lattice matching, combined with power and price advantage, derived as anodic oxidation of Al2O3 insulating layer is more appropriate, and its related parameters are as follows: density 3.75g·cm-3 ; thermal expansion coefficient of 7.1×10-6℃-1, thermal conductivity 21W / (m·K), dielectric strength 15kV/mm3. For the experiment which appeared after the insulating layer of conductive coating phenomenon, put forward two kinds of ideas. In the 2V voltage, from the electronic fluctuations take into account quantum effects, Al2O3 insulating layer of the dense layer thickness of 2.8nm can make the electron penetration is 100% 4. As the multi-layer film system is involved in micro-scale film, from the perspective of the theory of micro-thermal conductivity of the material amendments to, point out that the thickness of the film is not the thinner the better, there is an optimum value.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode > Diodes: structure and performance > Light-emitting diodes
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