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Research on C-BAND GaN PA MMIC

Author: WangXueZuo
Tutor: LiYe
School: Changchun University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: AlGaN/GaN HEMT C-Band MMIC PA
CLC: TN722.75
Type: Master's thesis
Year: 2010
Downloads: 124
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Abstract


The design of HEMT MMIC monolithic Power amplifier is presented. Content includes: Review and application of MMIC technology and its advantages relative to the HMIC, the advantages of MMIC and the theory of Two-Dimension Electronic Gas(ZDEG) about the HEMT and the small-signal main performance of HEMT device parameters are retrospect; At last, the detail of the designed MMIC Power amplifier and MMIC process are given. Good device performance of PA MMIC was obtained.A C-band MMIC Power amplifier based on GaN HEMT process is designed. The amplifier is adopted of one-stage. The chip size is 5560um x 2290um. The amplify works at class-AB operation for optimal power out put with minimal distortion. In the output stage. The power amplifier has11dB small-signal gain with input and output VSWR less than1dB.Pout is more than 30.4dBm from 7.6 to 8.1GHz.Input and output ports all mate to 50 ohm. In conclusion, analysis of the simulation results satisfied all requirements, at the same time, these results evidently verified the feasibility and reliability of the design conception.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier > Amplifiers: the role of sub- > Power amplifier
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