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The Study of AlGaN/GaN Heterostructure and n-type GaN Film on Vicinal Substrate

Author: XuZhiHao
Tutor: ZhangJinCheng
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: GaN AlGaN / GaN Miter substrate an n-type GaN
CLC: TN304.2
Type: Master's thesis
Year: 2010
Downloads: 164
Quote: 1
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Abstract


GaN materials as a third-generation semiconductor material, has a wide band gap, high saturated electron drift velocity and high breakdown field strength, and is widely used to develop a variety of optoelectronic devices and high-temperature, high-frequency microwave high power devices. So far, people have not been able to get the body of high-quality, large-size GaN crystal materials, device-level GaN materials are usually on a foreign substrate epitaxial get. Since the GaN epitaxial layer and the heterogeneous substrate exists between the large lattice mismatch and thermal mismatch, there is a high density of defects in the GaN epitaxial layer. The high density of defects will seriously affect the device performance, low defect density GaN materials research has been one of the core issues of GaN field. In addition, GaN material, after all, is a new type of semiconductor material, the material basis for further research remains to be people. The this paper miter sapphire substrate on the characteristics of the material of the AlGaN / GaN heterojunction, AlGaN / GaN heterojunction material defect density is significantly reduced through the use of chamfered substrate heterojunction characteristics of the material has been significantly improved. Miter substrate material growth technology and optimized eventually developed a high-performance AlGaN / GaN heterostructure. N-type GaN materials with important applications in the AlGaN / GaN HEMT devices and a variety of optoelectronic devices, the end of this article also systematically study the multifaceted characteristics of Si-doped n-type GaN materials, high performance of AlGaN / GaN HEMTs devices and optoelectronic devices The research has laid the foundation. The main work and results of this paper are as follows: 1. Studied the the bevelled sapphire substrate using low-temperature AlN nucleation layer on the growth of AlGaN / GaN heterostructure material characteristics. Experiments found that through the using miter substrate, the crystal quality and surface morphology of the AlGaN / GaN heterojunction material has been significantly improved, the carrier mobility of the heterojunction material are greatly improved. Improve the physical mechanism of the miter substrate material properties of the heterojunction. 2 Research miter sapphire substrate of the high temperature AlN nucleation layer is grown on the AlGaN / GaN heterojunction characteristics of the material. C partial to a surface and c partial m-plane the miter substrate on the growth of AlGaN / GaN heterostructure materials are more systematic study. The study showed that the a-plane or c Whether c Partial Partial miter m-plane substrate, are able to significantly improve the material characteristics of the heterojunction, the size of the substrate of the miter angle properties of the materials of the heterostructure has an important impact . The study compared the use of low and high temperature miter AlN nucleation layer on a substrate improving the physical mechanism in the material properties of the heterojunction. 3. Stress properties of Si-doped n-type GaN material. Different doping concentration n-type GaN material stress release mechanism. The studies suggest that in a low dopant concentration in the sample, the material stress and the release mechanism is bent dislocations; high dopant concentration in the sample, the material stress and the release mechanism is the edge dislocation. 4 Study of the electrical characteristics of the Si-doped n-type GaN material. Was found that as the Si doping concentration is increased, the sample carriers in the sub-room temperature migration first increased then decreased. In this paper, study the transport properties of the n-type GaN material given a reasonable explanation of experimental results. 5 study of the optical characteristics of the Si-doped n-type GaN material. The study found that the n-type GaN in the yellow band edge dislocation density in the strength and material in the closely related. Studies suggest that this was mainly due to the material edge dislocation trapping electrons becomes negatively charged center, in effect, the coulomb force, it is possible to adsorbed around a large number of positively charged centers reduces the donor - affected by the distance between the pair of the master. The yellow band intensity of the n-type GaN material and Si doping concentration, the relationship between the rate of the carrier mobility, analyzes the intrinsic physical mechanism.

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