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Electrochemical Investigation of Anti-Thrombogenic Ti-O Film

Author: LvBo
Tutor: WanGuoJiang
School: Southwest Jiaotong University
Course: Biomedical Engineering
Keywords: Ti-O film Anticoagulant Charge-transfer Electrochemical Impedance Schottky
CLC: TB383.2
Type: Master's thesis
Year: 2010
Downloads: 48
Quote: 2
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Abstract

As a biocompatible inorganic material , Ti-O film has been widely used in cardiovascular the anticoagulant surface modification of the implantable devices , such as artificial heart valves and artificial vascular stent . However anticoagulant mechanism remains unclear so far , which greatly hinder the Ti-O film preparation process optimization further improve its anticoagulant effect . Ti-O thin films anticoagulant mechanism , the paper unbalanced magnetron sputtering technology commercially pure titanium surface preparation of different composition and structure of the Ti-O film , using X-ray diffraction (XRD) and (XPS ) Characterization of the structure and composition of the film , using the four-probe method and a light absorption method for testing the resistivity and the forbidden band width , by the platelet adhesion test , LDH experiment, the fibrinogen denaturation experiments Evaluation the blood compatibility of the film , using the electrochemical impedance ( EIS), Schottky (Mott-schottky) measuring the electrochemical behavior of the interface between the film and the plasma protein , summarize regularity relations , the main conclusions are as follows : X -ray photoelectron spectroscopy results show that the three films non - stoichiometric titanium dioxide , as the oxygen partial pressure decreases , the lattice atoms of the O / Ti ratio is gradually reduced, respectively 1.83,1.80,1.78 . X-ray diffraction structure of the test showed that the synthesis gradually transformed into a low oxygen partial pressure of rutile and anatase TiO2 film by high oxygen partial pressure pure rutile and anatase TiO2 , Ti2O3 and TiO mixed phase structure . In vitro blood compatibility evaluation results show that the lattice O / Ti ratio of 1.80 , rutile TiO2, anatase TiO2 , Ti2O3 phase mixed crystal structure of the Ti-O film with excellent anti-clotting properties . The interfacial electrochemical test results show that the Ti-O film having excellent anti- clotting behavior of the oxygen-deficient \and the level energy charged bit more negative . Based on the semiconductor surface electrochemical theory , explaining the Ti-O film having an excellent anti-coagulation performance reasons : the Ti - O semiconductor film surface conduction band bottom Esc higher level position , the fibrinogen in difficulties in transferring electrons to the material , thus effectively reduces the risk of the first coagulation factor in the activation of fibrinogen and the coagulation reaction .

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