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Stress Effect on PZT Films and Substituent Effect on CCTO Ceramic

Author: HuZhiXiang
Tutor: LiLiBen
School: Henan University of Science and Technology
Course: Condensed Matter Physics
Keywords: Ferroelectric Film Stress Phase change BaCu3Ti4O12 Permittivity
CLC: O484.4
Type: Master's thesis
Year: 2009
Downloads: 48
Quote: 0
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Abstract


Ferroelectric material has very important applications in ferroelectric memory , infrared detectors , surface acoustic wave and integrated optical devices and other solid-state devices , has greatly promoted the research and development of ferroelectric physics and ferroelectric materials . Application ABO3 perovskite structure Pb ( Zr , Ti ) O 3 < / sub > ( PZT ) series . PZT thin film with a high dielectric constant ( up to 10 3 < / sup > -10 4 < / sup > ) in the vicinity of the Curie temperature , PZT ferroelectric , dielectric properties of affected by its growth substrate . The first part of using a modified Landau thermodynamic theory of growth on the MgO substrate Pb ( Zr in 0.7 < / sub > , the Ti 0.3 < / sub > ) O 3 the ferroelectric and dielectric properties . Noting film preparation process the thermal stress generated with the position change of Elasticity decided by its form, and found that the coexistence of two phases in the PZT film , thus affecting its ferroelectric and dielectric properties . CCTO (CaCu 3 Ti 4 O 12 ) ceramic samples with up to 104 relative dielectric constant and relative permittivity between 100K-600K the electric constant value does not change with temperature changes. In the vicinity of 100K , the dielectric constant of 2-3 orders of magnitude lower , but did not find any structural phase transition occurs . But for the cause of its high dielectric remains controversial. In this paper, A bit alternative dielectric constant on the the CCTO class materials . Using traditional solid state reaction method in 950 ° C pre-sintering , the sintering temperature was prepared BaCu 3 Ti 4 O 12 (BCTO) ceramic samples measured each sample at different frequencies , the dielectric constant and dielectric loss variation with temperature relationship , found that the dielectric constant of the BCTO than CaCu 3 < / sub > the Ti 4 < / sub > O < sub > 12 dielectric constant . Tolerance factor calculation found that the crystal structure BCTO easy distortion The XRD diagram analysis outside addition to containing BCTO crystalline phase , indicating that the sample also contains the Cu 3 < / sub > TiO 5 and Cu 3 TiO 4 and other impurities , thereby greatly reducing the dielectric constant of BCTO .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films
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