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The Investigation of Gan-Based Ultraviolet Photodetector

Author: SunZuoZuo
Tutor: ZhangXiHe
School: Changchun University of Science and Technology
Course: Optics
Keywords: GaN Ultraviolet Metal - semiconductor - metal Photodetector
CLC: O434.22
Type: Master's thesis
Year: 2008
Downloads: 278
Quote: 0
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Abstract


Ultraviolet detectors can be used for research, military , aerospace , environmental protection and many other areas , GaN-based materials prepared by the MSM ( metal - semiconductor - metal ) photodetector is a hot research topic in people . In this paper the use of metal -organic chemical vapor deposition epitaxy grown on a sapphire substrate quality GaN-based semiconductor thin film , its p -type carrier concentration of 10 18 . Prepared on the basis of the structure and the pin structure GaNMSM ultraviolet detectors , the response peaks reached 0.19A / W and 0.95A / W. By optimizing the film growth conditions (AlN insert layer ) to give a high quality and tunable band gap (3.45 ~ 3.81 eV) of the AlGaN film , the annealing treatment , to obtain a response will peak at 308nm 0.07A / W of ultraviolet detector.

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CLC: > Mathematical sciences and chemical > Physics > Optics > X-ray,ultraviolet, infrared > UV
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