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InAs/GaInSb Superlattice Epitaxl Growth Simulation and Micro-Structure Research

Author: WangHongLei
Tutor: LiMeiCheng
School: Harbin Institute of Technology
Course: Materials Physics and Chemistry
Keywords: InAs/Ga1-xInxSb KMC SOS band structure
CLC: TN304.055
Type: Master's thesis
Year: 2007
Downloads: 160
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Abstract


The Kinetic Monte Carlo （KMC） method based on Solid-on-Solid （SOS） model has been used to simulate the growth of InAs/Ga1-xInxSb superlattice （SL） grown by Molecular Beam Epitaxy （MBE）. The band structure of InAs/Ga1-x. InxSb superlattice has been calculated by the Envelope Function method. On the basis of simulation and calculation, a SL photovoltaic deVice was designed.The simulation shows that, when the substrate temperature is 663K, the Roughness-Time curve of InAs/Ga1-xInxSb growth on GaSb buffer displays a periodical oscillation, which agrees with the reported RHEED’s patterns. It indicates the high quality SLs growth by MBE at this temperature. The InSb-like interface in the InAs/Ga1-xInxSb SL is smoother than the GaAs-like version. Furthermore, the quality of film degrades as the In content increasing in the Ga1-x InxSb growth.In general, the SL period and In content contribute the band structure change of InAs/Ga1-xInxSb SL. The caulation result exhibits that, the energy of SL HH1 subband rises and C1 declines when InAs layer thickness increases, so band gap Eg decreases; on the other hand, increasing the thickness of GalnSb layer results in both C1 and HH1 rise then Eg has little changes. Because the In content affects on both strain and most band structure parameters of GalnSb, the SL band structure will vary significantly due to the changing content. Besides, the energy of C1 subband declines and HH1 rises with In content increasing, which results in the quick decrease of band gap.A p-i-n photodiode based on InAs/Ga0.9In0.1Sb （3nm/2.7nm） superlattice has been designed. The active layer consists of 20 periods unintentional doped SLs sandwiched between 40 periods p-type SLs (GalnSb: Be 1×1017cm-3) and 40 periods n-type SLs (InAs: Si 5×1017cm-3). The dark current at 77K mainly make up of the generation-recombination （G-R） current and band-to-band tunneling current. The G-R current dominates the dark current when the re Verse bias lower than 16.5mV, while beyond 16.5mV the band-to-band tunneling current exceeds.

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