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Kinetic Monte Carlo Simulation of Deposition of Co Thin Film Growth on Cu (001)

Author: ShiYanLi
Tutor: LiuZuLi
School: Huazhong University of Science and Technology
Course: Materials Physics and Chemistry
Keywords: Heteroepitaxial Thin film deposition Kinetic Monte Carlo Growth patterns Incident energy Deposition rate Film morphology
CLC: TB383.2
Type: Master's thesis
Year: 2007
Downloads: 144
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Abstract


Following the discovery of the Fe / Cr multilayers giant magnetoresistance effect , giant magnetoresistance effect has become the hotspot of international research , it was discovered that the ferromagnetic metal or alloy films of transition metals with non-magnetic metal multilayers can be presented after the giant magnetoresistance the effect, in which the highest GMR value of Co / Cu multilayers at room temperature giant magnetoresistance effect of up to 65 % . In addition to the multi-layer film , also found in the granular film tunnel junctions , spin valve giant magnetoresistance effect . The head of the giant magnetoresistance effect was found after the sixth year , IBM has developed into a read-out of the giant magnetoresistance effect , the disk recording density suddenly increased 17 times , up to 5G b in2 Today laboratory recording density 100G b in2, re - leading position in the competition with the CD . The giant magnetoresistance effect , easy miniaturization , low-cost technology , the same can be applied to the measurement of displacement , angle sensors and magnetic random access memory in addition to the read-out head , has a great prospect , caused widespread concern . The growth and structure of the film has an important effect on the giant magnetoresistance effect , especially between the film and the film between the film and the substrate roughness have a great impact on the giant magnetoresistance effect , while the film growth process and growth mechanisms in the experiment is difficult to observe , which requires the help of theoretical calculations and simulations . In this paper , we use a three-dimensional model based on kinetic Monte Carlo method (kinetic Monte Carlo) heterogeneous growth of Co thin films on Cu (001) surface . We simulated the circumstances of the incident energy , the epitaxial deposition of Co to ??the Cu (001) substrate , the thin film growth early ( 2500 deposited particles ) and the final state of the morphology and surface roughness ( 20,000 deposited particles) , also on the growth pattern of the film to do some research . The results indicate that when the thickness is less than two layers , the growth of the film rendering the island shape, the film thickness of more than two layers , the growth of thin film layered manner . In the initial stage of the growth of the thin film , there is an energy turning point, and turning points in this energy , the roughness of the surface of the film is the smallest , in the final state, the roughness of the film is reduced as the incident energy increases , the initial state of the growth mode of thin films eventually the state has some influence , there is still a vacancy in the film 's internal exist . The simulation results and experimental agreement .

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