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Preparation and Sensing Property of Nano-crystalline SnO2 Thin Films Doped with in and Sb

Author: LiGuanNa
Tutor: ZhouDongXiang
School: Huazhong University of Science and Technology
Course: Materials Physics and Chemistry
Keywords: Gas sensing film SnO2 Indium doped H2S Sol - gel method .
CLC: TB383.2
Type: Master's thesis
Year: 2007
Downloads: 54
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Abstract


Sensing technology is an important part of modern science and technology plays an increasingly important role in the national economy as well as the development of science and technology to Chiang Kai-shek . With the development of economy and technology in various industries in various fields of gas sensors newer and higher requirements , vigorously develop the gas-sensitive sensor technology imperative . H 2 S gas is widely present in the oil , chemical production process in an extremely toxic gas , so the urgent need to develop a capable of detecting the trace H 2 S gas gas sensor . SnO 2 as sensitive materials have been widely used . In this experiment, the inexpensive inorganic salts and ethanol as raw material , the SnO 2 nano film prepared by sol - gel dip-coating method (Sol-Gel Dip-Coating, SGDC) . Lower film resistance by doping Sb ion doping the In ion to improve the material H 2 S gas sensitivity and selectivity , lower component temperature . The systematic study of the preparation process of the component doping and coating layers and heat treatment temperature on the film surface morphology, grain size , and gas-sensing properties . The specific findings are as follows : sol component of the experiment , the results showed that : the indium doping amount 4at % . The film has a lower operating temperature : 165 ° C , and of H 2 S has a maximum sensitivity the : 82.2 ppmH 2 S sensitivity 17.8 . The film preparation process, the experiment results showed that: the best coating layers and the preferred heat treatment temperature of layer 7 , and 600 ° C respectively . In this case film Sui H 2 S gas concentration changes most significantly . As can be seen from the SEM image , the sample of grain size distribution and more uniform in size , the more dense deposition . From the XRD pattern is analyzed , the film is constituted by a SnO 2 nanocrystalline polycrystalline thin film according to the Scherrer's formula , the calculated average grain size of the film in 20.6 nm . SnO 2 films prepared best process parameters and test its gas sensing performance : the best working temperature of 165 ° C for thin-film devices . In this work temperature of 137 ppm H film sensitivity of 26.3 2 S ; film better gas sensitivity to low concentrations of H 2 S gas in 2.74 ppm of H 2 S a sensitivity of 2.5 . Moreover, the film in response to a shorter recovery time were 8 s and 22 s .

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