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Study of Ohmic Contact and UV-detector Based on GaN/Si

Author: LiJiaZuo
Tutor: YeZhiZhen
School: Zhejiang University
Course: Materials Physics and Chemistry
Keywords: UV detector Ohmic contact Hot-wall epitaxy Si substrate GaN Device applications Study the history and current situation GaN single-crystal films Cross-century talents Secondary ion Double- electrode
CLC: TN304.05
Type: Master's thesis
Year: 2002
Downloads: 210
Quote: 1
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Abstract


The master's thesis topics in the cross-century talents of the State Ministry of Education and the National Natural capital (No. 69890230) funded projects GaN on silicon epitaxial growth and device applications , \In recent years , the wide band gap semiconductor material GaN concern because of its broad application prospects in the short wavelength light emitting devices , photodetectors pieces , as well as anti-radiation , high-frequency and high-power electronic devices , has developed very quickly . Difficult to prepare GaN bulk crystal growth of high quality single crystal thin film material is to study the basic prerequisite for the development of GaN-based devices , device development , the electrode preparation of proposed higher requirements , and thus to study the metal electrode and the GaN contact become a necessity. This paper systematically summarizes the history and current situation of the domestic and international GaN material preparation and device applications , the use of the self- transformation of the hot-wall epitaxy equipment , film growth and material properties of GaN on silicon . The main work is to conduct a more detailed study , prepared on the basis of the UV detector on GaN on silicon metal and silicon n-type GaN ohmic contact . The main work is as follows : 1 in the country for the first time using simple reactive evaporation method using a hot-wall epitaxy technology polycrystalline GaN buffer layer hexagonal structure of GaN single-crystal films grown on Si (111) substrate . 2 the Al monolayer and Ti / Al double- electrode and n-type Si substrate GaN ohmic contact situations at different annealing conditions , and by X-ray diffraction spectra ( XRD ) , secondary ion mass spectrometry (SIMS) interface solid phase the reaction was analyzed , first proposed secondary annealing method . 3, in the own lab grown on Si substrate GaN MSM structure of photoconductive ultraviolet detector .

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