Dissertation > Excellent graduate degree dissertation topics show

The thermal characteristics of semiconductor lasers and packaging technology

Author: HeYouJun
Tutor: ZhangYongGang
School: Shanghai Institute of Microsystem and Information Technology Research Institute
Course: Microelectronics and Solid State Electronics
Keywords: A semiconductor laser Thermal Characteristics Packaging technology MQW lasers Quantum cascade laser Ridge waveguide InGaAsP InGaAs / InP Cooling effect Sintering
CLC: TN248.4
Type: Master's thesis
Year: 2003
Downloads: 685
Quote: 7
Read: Download Dissertation

Abstract


The thesis mainly focused on the thermal characteristics of semiconductor lasers and packaging technology on two fronts to 1.3μm InAsP / InGaAsP MQW ridge waveguide laser and InAlAs / InGaAs / InP mid-infrared quantum cascade laser as the research object, material for semiconductor lasers and structural characteristics, through simulation and experimental analysis of laser cooling solution. Its main contents are as follows: 1. In the commercial finite element software, based on the research and development of thermal characteristics of the laser simulation analysis methods. Using this method, the 1.3μm InAsP / InGaAsP MQW ridge waveguide lasers and 8μm InAlAs / InGaAs / InP quantum cascade laser mid-infrared and the epitaxial layer down down two kinds of sintering the substrate layer for a thermal analysis of the obtained heat distribution and thermal parameters. By comparing the simulation results obtained, it is determined to obtain the epitaxial layer downward to improve the laser sintering better cooling effect. We for the first time in a pulsed quantum cascade laser thermal resistance under lasing conditions were simulated and analyzed. By analysis, the pulse lasing, the laser with the apparent thermal resistance of the input pulse period and pulse width of the apparent thermal resistance with increasing injection pulse duty decreases and approaches the steady-state thermal resistance. We also simulated 1.3μm InksP / InGaksP multiple quantum well ridge waveguide semiconductor laser pulsed lasing conditions in the thermal characteristics of different cavity length, ridge width of the waveguide, the solder layer thickness and thermal conductivity such as thermal characteristics of the laser for analog, has been laser thermal relationship with these parameters and simulation are discussed on the basis of process conditions on the structure and thermal properties of the laser. 2. Existing conditions in the laboratory to study the laser package in the sintering process, which uses a vacuum evaporation method, in accordance with the experimental optimization of process parameters obtained uniformly deposited onto the solder plated copper processing designed heat sink; was the laser sintering die on the copper heat sink, designed to produce a sintering apparatus, and accordingly developed a detailed process equipment, the use of this process on the 1.3μm InAsP / InGaAsP MQW ridge waveguide laser sintering die conducted to meet the experimental requirements. 3. Use of laboratory characterization of semiconductor laser pulse measurement system, before and after sintering 1.3μm InAsP / InGaAsP MQW ridge waveguide laser is pulsed IV, IP characterization testing, characterization testing via IP, confirmed the sintering process and the cooling effect of the laser improvement of the output power. IV characteristics through testing, we have developed confirmed the validity of the sintering process, and different sintering die cooling effect and its difference with the simulation results are compared and discussed.

Related Dissertations

  1. Preparation and Tribological Properties of TZ3Y20A-SrSO4 Ceramic Matrix Composites,TB332
  2. The Preparation and Properties of Reed Woodceramic,TQ174.1
  3. Lightweight Aggregate Made from Waste Residue of Construction、Reclamation of Waste Foundry Sand Dust and Sludge,TU528.042
  4. Fabricationand Properties of SiC-AlN Multiphase Ceramics Prepared by Gelcasting,TQ174.62
  5. The Experimental Study of Semiconductor Laser Radiation and 5-FU Sustained Release Repressed Oral Malignant Tumor Cell,R739.8
  6. Study of the Water-Inrush Mechanism and Prediction of the Water-Resisting Floor,TQ133.1
  7. Lithium anode material calcined alumina crucible Development,TQ174.6
  8. The Research on Preparation Technology and Sintering Behavior of Rare Earth Aluminates (Dy3Al5O12、 NdAlO3、LaAl11O18),TB383.3
  9. The Study of Microstructure and Performance of La2 O3+CeO2-Ni-WC Composite Coating by Vacuum Fusion Sintering,TG174.44
  10. The Deformation Law and Its Influnecing Factors of Iron-based Valve Plate in Sintering Process,TF124.5
  11. Preperation of Low Friction and Wear Resistant High-Purity Alumina Ceramic,TQ174.1
  12. Reaction Sintering Preparation of Titaniferous Compound Ceramic Composites by Two-step Method,TQ174.1
  13. Study on Low Temperature Sintered PSN-PZT Piezoelectric Ceramics,TM282
  14. Study on the Stoichiometric Ratio of Material and Reducing- Reoxidation Technology of Laminated PTCR,TN605
  15. Study on the Construction Methods of Exterior Greening Wall in the Summer Hot Area,TU985.125
  16. Fabrication of Biporous Wick and Its Application in Loop Heat Pipe,TK172.4
  17. Microwave drive power and microwave sintering furnace study,TN015
  18. Micro Napo guide grating and its manufacturing technology research,TN814
  19. Sintering Heat Treatment Process Modeling and Control Based on Data-drive,TP273
  20. REC -based technology, the new DFB semiconductor lasers,TN248.4
  21. Nanoscale Bi 2 Te 3 Powders and Sintered Properties,TB383.1

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser > Semiconductor lasers
© 2012 www.DissertationTopic.Net  Mobile