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Experimental Investigation of the Visible Light Arrays of Si-CCD Irradiated by the Laser
Author: WangJinBao
Tutor: ChengXiangAi
School: National University of Defense Science and Technology
Course: Optical Engineering
Keywords: Visible light Si-CCD detector Continuous laser Saturation effects Pulsed laser Permanent damage Mobile spot Visible band filter
CLC: TN386.5
Type: Master's thesis
Year: 2003
Downloads: 330
Quote: 10
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Abstract
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Photoelectric detectors are widely used in many fields with its own advantages . CCD detector pieces , which play a significant role in the civilian and military aspects of As photodetectors , CCD devices are susceptible to the strong laser interference and damage , various effects have important practical significance to study laser irradiation of the CCD detector . This paper systematically study the band , band laser opposite array Si-CCD device radiation effects , and is based on a variety of work ( continuous light and different pulse width pulse light ) laser as a light source . The main work of the thesis are: 1 . Respectively continuous with the three wavelengths (532nm, 1064nm, 808nm) laser irradiation visible light CCD detectors , the measurement of the detector for the saturation threshold of the three - wavelength laser . It was found that continuous laser easily the CCD to produce saturated interference effect , but not easy to make the CCD permanent damage . Not respond to visible light CCD detectors for 1319nm laser , experimental verification . 2. Measured pulse width were 7.7ns 100μs wavelength of 532nm, 1064nm pulse laser damage threshold of visible light CCD detector : the imaging results combined with the damage and destruction morphology failure mechanism analysis . Single field under pulsed laser saturation phenomenon . 3. The experiment to 1064nm , 1319nm continuous laser is triggered , there is a relatively strong, and can damage the CCD detector long pulse light, the failure mechanism of this phenomenon has been studied . 4. 3800nm ??continuous laser is destroyed under the conditions of the spot movement of the visible band filter ; damage threshold contrast spot on the sample in both stationary and moving case , destruction of the morphology and qualitative analysis .
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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices > Charge-coupled device
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