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High-K gate dielectric reliability study

Author: YangHong
Tutor: KangJinFeng
School: Beijing University
Course: Microelectronics and Solid State Electronics
Keywords: High-K gate dielectric Time-varying breakdown Stress induced leakage current Constant voltage stress Breakdown mechanism Carrier separation Charge trapping
CLC: TN432
Type: Master's thesis
Year: 2005
Downloads: 390
Quote: 2
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Abstract


CMOS technology into the 45nm technology generation , it will be necessary to take advantage of the high-K gate dielectric materials to replace the traditional SiO2 or SiNxOy gate dielectric in order to overcome its unacceptably high gate leakage current , which HfO2 is considered to be the most promising high -K gate one of the candidates of the dielectric material . This thesis focuses on the metal gate / high-K gate dielectric integration applied to the actual needs of the CMOS device to carry out the thin HfN/HfO2 gate dielectric structure ( EOT lt ; 1nm ) the reliability of research , the following research : ) stress induced leakage current SILC effect the the ultrathin gate HfN/HfO2 medium having a low trap charge density before dielectric breakdown is negligible ; 2 ) having a low trap charge density ultrathin HfN/HfO2 of the gate medium, their TDDB characteristics will be introduced by the intrinsic rather than technological factors . In the high-K gate dielectric and the Si substrate the inevitable interface layer , high-K gate dielectric breakdown of the structure by the dielectric layer and the interface layer of high - K body joint decision ; 3) in the international arena , the first observation to prove , in a low trap charge density ultra-thin HfN/HfO2 gate dielectric structure , in the case of gate injection , the mechanism of high-K gate dielectric breakdown stress electric field dependence characteristics : the electric field of high stress , the breakdown of the dielectric layer of the HfO2 body dominate the high K gate dielectric breakdown; under low stress field , the breakdown of the interface layer dominate the high-K gate dielectric breakdown ; 4 ) using carrier separation methods , the high , low stress field charge trapping characteristics : In the high electric field stress , the the HfO2 body dielectric layer hole capture dominant ; dominant in the low electric field stress , the interfacial layer electron capture ; 5 ) based on the stress field dependent TDDB breakdown characteristics and charge trapping characteristics , combined with the energy band structure of ultra-thin high-K gate dielectric structure , proposed a new metal gate / high-K gate dielectric breakdown model . This is the first ultra-thin high-K gate dielectric structure TDDB breakdown is not only the stress polarity of the voltage -dependent , and the stress field dependent , therefore , the traditional gate dielectric life prediction model is not suitable for ultra-thin high-K gate dielectric situation , need to develop new high-K gate dielectric life prediction model to meet the needs of high-K gate dielectric applications .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Microelectronics, integrated circuit (IC) > Semiconductor integrated circuits ( solid state circuits ) > Field-effect type
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