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The electronic display medium between people and machines, electronic devices of all sorts of information from a variety of machines (equipment) information passed to people through visual. It is charged with the role of a bridge between people and machines. The flat panel display as a new type of display technology, more and more people pay attention, compared with the CRT, it has a light weight, small size, low power consumption, and thus on the big screen, portable computers and other fields has broad application prospects. The field emission flat panel display, become the focus of attention in recent years as a new force in the flat panel display. It lies in the production of highly efficient, stable and uniform field emission cold cathode. In the cathode material, it has been tried many, such as a metal micro-cone type field emission array (spind), cold cathode material of the diamond or diamond-like carbon, carbon nanotube thin film material. However, in the amorphous carbon thin film field emission is relatively small, because it has good chemical and thermal stability, a high melting point and thermal conductivity, low dielectric constant, the carrier mobility and high breakdown voltage, the electron affinity of these materials together potential (EA) is very small or even negative (NEA), an important direction of research in recent years. In this paper, the study of nano-amorphous carbon film field emission properties are mainly the following aspects: (1) nano-amorphous carbon films made each and field emission performance testing using microwave plasma chemical vapor deposition the (MPECVD) method, in the amorphous carbon thin film is grown on the silicon chip (111) after a carborundum grinding and titanium the nano. And by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) on the structure and morphology of the film analysis. The results showed that: the deposited material for the nano-amorphous carbon film. The field emission measurements, we use a diode structure in a high vacuum (less than 5 × 10 -5 pa), and to use ccd anode fluorescence record. The Results: nano-amorphous carbon films deposited on field low as 0.6V/μm. In the electric field for 3.7V/μm, the emission current density is greater than 10 5 2 / cm current density 2.5mA/cm 2 . These data illustrate the nano-amorphous carbon film is an excellent cold cathode material. (2) preparation of nano-amorphous carbon films Optimization of this article in the preparation of nano amorphous carbon films, using the microwave microwave plasma chemical vapor deposition the (MPECVD) method, and therefore more controllable conditions, including: a transition layer. choice; B.ch 4 flow choice; c. microwave power level of the deposition time; d. The choice of the transition layer, we use Ni, Mo, Ti three kinds of common metals, and test its thin-film field emission properties. The results showed that: Ti as the buffer layer, the field emission turn-on voltage minimum, more uniform emission point, a large current density can be obtained under a low electric field; while the methane flow rate of 16 sccm, the microwave power is 1700w, deposition time is 3 hours , and the resulting thin-film field emission
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