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Study on the Ultraviolet High Reflect Films with High Laser Damage Threshold

Author: HuJiangChuan
Tutor: LiaoKeJun
School: Chongqing University
Course: Condensed Matter Physics
Keywords: The UV thin-film Thin metal film Reflectivity Extinction coefficient Roughness Stress Temperature field
CLC: O484
Type: Master's thesis
Year: 2005
Downloads: 267
Quote: 0
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Abstract


On the the a new type of, can be applied to the strong laser ultraviolet band of the, high-the threshold value UV metal / dielectric multilayer high-reflection thin-film, the In this thesis, study to be undertaken of its optical nature and caused by of the the reasons for of the laser-induced damage. First of all, through the preparation of thin-film temperature field calculation program, simulated and analyzed K 9 / Al (HfO 2 / SiO 2 ) ^ 6/air, K 9 / (HfO 2 / SiO 2 ) ^ 3Al (HfO 2 / SiO 2 ) ^ 3/air, K 9 / Al (ZrO 2 / SiO 2 ) ^ 6/air, K 9 / (ZrO 2 / SiO 2 ) ^ 3Al (ZrO 2 / SiO 2 ) ^ 3/air High - reflected Multi thin-film in the under laser irradiation the changes in of the the the temperature field of of the different time. The calculations show that: the high reflective film of the G / M (HL) ^ The physical 6/air the two kinds of UV metal of the membrane the Department of / dielectric multilayer able to meet used for the field of strong laser the requirements of optical the nature and laser of damage threshold, while the G / (HL) ^ 3M (HL) ^ 3/air membrane Department of, K 9 / (ZrO 2 / SiO 2 ) ^ 3Al (ZrO 2 / SiO 2 ) ^ 3/air High - reflected Multi thin-film be able to applications the field of in the strong laser, but K 9 / (HfO 2 / SiO 2 ) ^ 3Al (HfO 2 / SiO 2 ) ^ 3/air thin-film in a strong under laser irradiation easy to damage the. Secondly, the use the electron beam evaporation deposition method-plated the system the K 9 / Al (HfO 2 / SiO 2 ) and high ^ 6/air multi-layer the reflective thin film. Thin-film is relatively dense, uniform, the the the interface between the in the adjacent two layers of is relatively flat. Of the upper-plated that the the the UV / metal medium the the high--reflection film after, the yl the roughness of the-on-a-chip the relative improvement in. , Roughness smaller the of the the Samples reflectance's largest, the wavelength even more distinctive to the the infrared Directions Drift, provided in the ultraviolet region, the a reflection the highest rate of the position of at and the a the location of the 266nm Wavelength and is closer to. The thin-film after absorbing water, the reflectance spectra of drift in the to the short-wave direction and the reflection rate has dropped; and the Properties of the after the the optical in in the sample dehydration restored to the the status quo. With a the the when the spectrophotometer in the the incident under the conditions of of the small-angle measure the thin-film reflection [Back] [Page top] rate of, and found the compared with the incident on the zero angle is, thin-film reflectance spectra of to the drift in the direction of long-wave, lower rate of reflection; while the the the in the the when the measurement of of the large angle, the reflectance spectra of to drift to the the short-wave direction , the reflective rate of is is relatively high. The thickness of the yl-chip, a certain when of the, the thin film stress with the the increase in the a thickness of of the aluminum layer while the increases, the is gradually Availability from the the their pressure stress and becomes the the PHOTOS stress is. The of Laser Induced Damage of the thin-film to carried out the analysis found that: is probable that the cause of the injury in the high-energy under laser irradiation will is to absorb, laser interferometer, the seeds and stress of the section aneurysm, and and so on on. Finally, the use of the electron beam evaporation deposition method the ZrO 2 single-layer dielectric thin film were prepared, studied the the the impact of of the the deposition conditions of its the the optical the nature and the damage threshold, found that: In the the different under the the substrate temperature of of the the same base, ZrO 2 the the refractive index of of the thin-film and extinction coefficient Sui the substrate temperature rises while the increases, the The of the damage threshold of the thin-film is while the reduce the Sui the the substrate temperature of the rises. Under the the the the type of substrate of in the the same temperature for, the-Acting the the refractive index of the a quartz substrate of thin film, the Injury threshold value is higher than K9 glass yl BLADE thin film, All a while the the the coefficient of sheets of film FOR fused quartz by Extinction higher than K9 glass yl-chip if such is much smaller of the film. The transmission rate of in the the thin-film after absorbing water will be reduced, refractive index to the the be the elegant as the the long-wave direction.

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