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Study of Nonlinear Optical Property in InGaN/GaN Quantum Well

Author: LiJunJie
Tutor: YaoDuanZheng
School: Wuhan University
Course: Optics
Keywords: quantum well exciton susceptibilities dipole transition matrix element degenerated four wave mixing
CLC: O472.3
Type: Master's thesis
Year: 2005
Downloads: 236
Quote: 0
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Abstract


The study focused on the third-order nonlinear susceptibilities x3 in InxGa1-xN/GaN quantum well, and also included the influence of built-in piezoelectric on the nonlinear susceptibilities.In the paper, what are introduced at first are the energy dispersions of quantum well, the interband transition and the exciton binding energy. Also some fabrication methods of GaN-based quantum well are mentioned.And then, the wavefunction is obtained by using the energy dispersions model in the quantum well. After analyzing the relationship between the magnitude of built-in electric field and the In composition, we gained the formalism of the third-order susceptibilities with the density matrix formula. By the effective mass theory, the dipole transition element is calculated.Finally, the third-order susceptibility of Degenerated Four Wave Mixing is calculated as a function of In composition. We also compared the susceptibility not taking the piezoelectric field into account and gave out the reasons why the magnitude of nonlinear susceptibilities reduce and the resonant frequency move towards the lower energy.

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductor Properties of > Optical Properties
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