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Surface Structure Investigation of Electronic Materials with Atomic Force Microscopy

Author: ZhengZiYao
Tutor: WangZhu
School: Wuhan University
Course: Microelectronics and Solid State Electronics
Keywords: Atomic force microscopy (AFM) Low-E film Magnetron sputtering TiO2 positron annihilation GaAs
CLC: TN04
Type: Master's thesis
Year: 2005
Downloads: 284
Quote: 3
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Abstract


Atomic force microscopy (AFM), due to having a very high spatial resolution ability, the surface of the sample does not require special handling, etc., which are widely used in film and surface micro-structure of the analysis. This article briefly describes the working principle and characteristics of the atomic force microscope and atomic force microscope, the installation and commissioning of the key skills and operating experience to do a detailed introduction. Including the physical mechanism of the atomic force microscope, scanning mode, the optical detection system debugging, as well as in the scanning process problem solving. Through experiments to find a more convenient method of debugging optical detection system; compare the contact mode and the dynamic mode (i.e. tapping mode) two scanning modes described in the outstanding advantages of the dynamic model in the surface topography measurement; scanning process encounter the image surface drag, drift of the image, periodic interference, soft sample scan illusion distinguished on proposed some solutions; slope correction (Slope Correction) flatten (Flatten) eliminate noise (Erasing the Noisy Lines) and other methods for data processing, to thereby obtain the surface image of the atomic force microscope and quality. We use DC reactive magnetron sputtering TiO 2 Low-E film. In this paper, a new installation of AFM different preparation conditions TiO 2 film surface roughness, hoping to find them with low-emissivity film infrared through the contact of the nature of the microstructure. The main results are as follows: prepared by reactive magnetron sputtering TiO 2 Low-E film, the increase in the partial pressure of oxygen in the sputtering gas, may lead to the increase in oxygen vacancies, the conductivity of the film increases, the infrared transparent over the rate of decline. Meanwhile, the oxygen partial pressure rise may result in the film grain growth same conductivity increases, further reducing infrared transmittance. Of Ⅲ - Ⅴ compound semiconductor gallium arsenide as the representative of a high degree of mobility, and superior than silicon optoelectronic performance, many domestic and foreign research and application of such materials has been a hot topic. When used in laser and electronic integration technology, material surface damage layer and defects (such as dislocations, stacking faults, etc.) have a great impact on its performance. Positron annihilation spectrum measurements can be given directly to the defects, the positron lifetime spectrum measurement GaAs samples with different surface roughness and surface morphology of conventional positron lifetime measurements.

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