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Growth of ZnO Thin Films on Si Substrate and Aging Test of Si-based GaN Traffic-green LED

Author: LiDongMei
Tutor: JiangFengYi
School: Nanchang University
Course: Materials Physics and Chemistry
Keywords: ZnO MOCVD GaN Si Ti Green Transportation Light-emitting diodes Aging
CLC: TN304
Type: Master's thesis
Year: 2006
Downloads: 206
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Abstract

Thesis is divided into two blocks: 1, MOCVD method on Si (111) substrates grown ZnO thin films; 2, silicon GaN green LED traffic aging properties. 1, MOCVD method on Si (111) substrates ZnO thin films grown on ZnO, a direct band gap as wide bandgap semiconductor material, is the second GaN semiconductor optoelectronic field after another hotspot. Although the international community has pin junction ZnO LED, and has grown high quality ZnO films, but there is a large distance from the actual application. Currently most of ZnO film grown on a sapphire substrate, the sapphire substrate is expensive, is an electrical insulator, and the poor thermal conductivity. In ZnO films grown on Si substrates is very attractive prospect, because Si is the most mature semiconductor materials. It is not only cheap, mature processing technology, and easy to control the conductivity type and conductivity, in addition to having a high thermal conductivity. Grown on silicon light-emitting devices may also realize optoelectronic integrated. However, due to a greater between ZnO and the Si lattice mismatch and thermal mismatch, directly on the Si substrate of ZnO film is very difficult. To address this situation, the ZnO films grown on Si substrates is necessary to introduce different buffer layer to improve the crystallinity of the film. In this thesis, developed by our laboratory atmospheric MOCVD system in Si (111) substrates by introducing a new buffer layer (Ti metal transition layer) of ZnO thin films and explore the Ti / Si (111) template ZnO on growth conditions. Using pressure MOCVD method in Ti / Si (111) ZnO films grown on the template. Ti film has a thickness of 1-2nm. First, diethyl zinc (DEZn) zinc source and deionized water as the oxygen source for the growth of ZnO film, the low-temperature ZnO buffer layer is grown at different times, the subsequent performance of the ZnO films were quite different. By comparison, optimized diethylzinc zinc source buffer layer growth conditions. Second, under the same growing conditions and the same number of moles of zinc atoms supply, the comparison of two zinc sources (DEZn and DMZn) of ZnO thin films by adjusting the temperature ZnO buffer layer growth temperature and the epitaxial layer DMZn flow, improve the crystallinity of the film. Third, dimethyl zinc (DMZn) as source of zinc and deionized water as the source of oxygen growth of ZnO thin films, a comprehensive analysis of the epitaxial layer grown under different DMZn flow double-crystal ZnO film X-ray diffraction (DCXRD) of ω-rocking curve, powder diffraction pattern and room temperature PL spectra showed that: 10ml/min of DMZn flow (source bottle temperature is 5 ℃) ZnO films grown under better performance; addition, also studied the low-temperature ZnO buffer layer in DMZn flow properties of ZnO thin films from powder test results (002) diffraction peak positions that view, the growth znO

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