Dissertation > Excellent graduate degree dissertation topics show

Study of Nitrogen and Its Related Complexes in the Nitrogen-implanted Silicon

Author: ChenHaiLong
Tutor: YangDeRen；ZuoDuanZuo
School: Zhejiang University
Course: Materials Physics and Chemistry
Keywords: Silicon Nitrogen ion implantation Nitrogen - vacancy complex Electrical properties Nitroxide complex
CLC: TB332
Type: Master's thesis
Year: 2006
Downloads: 59
Quote: 0
Read: Download Dissertation

Abstract


Nitrogen impurities on silicon single crystal nature has important implications, the nature of the nitrogen in silicon has been studied people morphological and defect mechanism exists. The papers by nitrogen ion implantation incorporation of nitrogen impurities in silicon single crystal, RTP (Rapid thermal processing, rapid thermal processing) processing by FTIR (Fourier transform infrared spectroscopy, Fourier transform infrared spectroscopy), SRP (Spreading Resistance the Profiles spreading resistance), DBS (Doppler broadening spectroscopy, positron annihilation Doppler broadening spectroscopy) and other means of the injection of nitrogen in silicon, nitrogen - vacancy complex, the electrical properties of nitrogen - oxygen complex, and nitrogen on silicon were studied. The following is the main content of this thesis work, and its main results achieved: 1) the use of FTIR analysis of nitrogen injection the different temperature R7P processing silicon (CZ-Si and FZ-Si), found that at 750 ℃ ~ 850 ℃ after the RTP processing unreported new infrared absorption peak. Based on infrared absorption peak annealing behavior, they appear to make an explanation. And, according to the results of previous theoretical calculations modeling of complex structures, verified through computer simulation, the new infrared absorption peak the N 2 V 2 composite body corresponding to the absorption peak. 2) using the SRP to study the electrical properties of the the nitrogen injection wafers at different temperatures after the RTP processing, the results show that with increasing RTP temperature Note the expansion of the nitrogen in the n-type silicon wafer near-surface resistance continuously decreases i.e. carrier concentration continuously elevated. Since the state substitutional nitrogen is a donor in silicon, it is considered as RTP annealing temperature, the nitrogen partial gap bit constantly converted to the alternative position nitrogen, thereby increasing the concentration of the silicon carriers. 3) the use of DBS change in vacancy concentration in the nitrogen injection in the treatment of different temperature RTP silicon. The results show that, with the the RTP temperature rise, DBS reflected in the continued decline of the S parameters vacancy concentration changes vacancy concentration with increasing annealing temperature nitrogen injection silicon lower. The RTP temperature rises to 850 ℃ space-time bit concentration decreased. Combined with infrared spectroscopy experimental results, we believe that the with RTP temperature rise, vacancies continue to interactions with the nitrogen atom to form a complex. 4) using FTIR study different temperatures RTP annealing the nitrogen-oxygen, nitrogen and oxygen is injected simultaneously the n-type FZ-Si composite body changes. FTIR results show that, within the range of 450 ~ 850 ℃ RTP temperature rise oxynitride composite body infrared absorption peak is weakened in the first enhanced. Range of 450 ~ 650 ℃, nitrogen-oxygen complex infrared absorption peak enhancement; R / P temperature of 650 ° C, the nitrogen-oxygen complex infrared absorption peak most

Related Dissertations

  1. Screening of Silicate Mineral-solubilizing Bacteria and Their Effect on Silicon Dissolution in Soil,S144.9
  2. Fabrications and Applications of Microelectrode Array of Silicon Dioxide Cavities and Magnetic Ferroferric Oxide Nano-Bioconjunctions,TB383.1
  3. The Basic Research of Properties of All-ceramic Restoration Bonded by Resin Cement and Color Properties of the Resin,R783.1
  4. Metallurgical grade silicon refining boron removal study,TQ127.2
  5. Cold-rolled silicon steel edge cracking mechanism of generating,TG335.12
  6. Non-oriented silicon organic - inorganic composite coating on very thick insulation,TG174.4
  7. Nitrogen oxide silicon nitride ceramic fiber reinforced ceramic matrix composites through the waves and Properties,TB332
  8. Preparation 3DC_f/SiC vapor infiltration of silicon structure, performance and interface Regulation,TB332
  9. Hydrogenated nanocrystalline silicon photovoltaic materials in hydrogen bonding defects in material structure and the impact of,TB383.1
  10. Influence of Fe on Structure and Electrochemical Performance of Sn_xCo_y/C Anode Material,TM912
  11. Preparation and Characterization Open Framework Zeotype Germanates,TQ424.25
  12. Preparation and Propylene Dehumidification Performance of Poly (Vinyl Alcohol)-silica Hybrid Membrane,TQ028.8
  13. He Effect of Hydrogen on Deposition Rate, Thin Film Structure and Properties of Silicon Based Films by PECVD,TB383.2
  14. Preparation of Silicon and Silver Nanowires and Si Nanowire’s Thermoelectric Performance Analysis,TB383.1
  15. Preparation of Nanocrystal Silicon/polymer Composites and Study on Their Opto-electronic Properties,TB383.2
  16. Research on the Fabrication of C/SiC Composite Using C/C Foam Preform Via Gaseous Silicon Infiltration Process,TB332
  17. Design and Manufacturing on Grid Composite Cylinder Structures,TB332
  18. The Preparation and Properties of Silicon Nitride-Based Continuous Functionally Graded Materials,TB34
  19. Screening and Breeding of Silicate Bacteria for Bauxite and Silicon Releasing Study,TD952
  20. Effect of Deformation Mode on the Formation of Primary Recrystallization Texture in Grain-oriented Silicon Steel,TG335
  21. Analysis on Hot Rolling and Cold Rolling Texture of Fe-3% Si Steel Strip,TG335.1

CLC: > Industrial Technology > General industrial technology > Materials science and engineering > Composite materials > Non-metallic composite materials
© 2012 www.DissertationTopic.Net  Mobile