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Preparation and Characterization of p-type SnO2 Thin Films by DC Magnetron Sputtering

Author: ChenZuo
Tutor: JiZhenGuo
School: Zhejiang University
Course: Materials Physics and Chemistry
Keywords: Transparent conductive film Magnetron sputtering a p - type dopant Tin dioxide
CLC: TN304
Type: Master's thesis
Year: 2006
Downloads: 454
Quote: 6
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Abstract


Wide bandgap semiconductor materials (such as GaN, ZnO, etc.) is one of the hotspots in the field of semiconductor materials, has important applications in optoelectronic devices, high-temperature electronic devices, electronic devices, etc.. Tin dioxide (SnO 2 ) is an oxide semiconductor of the wide band gap (Eg = 3.6 to 4.0 eV), and having a high transmittance of visible light, low resistivity, good thermal stability and chemical properties stability, and low cost, widely used in gas sensing materials, solar cells, transparent electrode material and electric material fields. However, at present the most widely used transparent conductive oxide (TCO) film (such as IN 2 O 3 : Sn, SnO 2 : F, etc.) are n-type conductivity, while the most of the p-type the TCO film at the research stage. The superior performance of the p-type TCO films prepared preparation of transparent pn junction necessary, if successful, would have a far-reaching significance of transparent electronic components manufacturing. This thesis is an overview of various Preparation of SnO the 2 film technology, of SnO , 2 characteristics of the film and its application, of SnO , 2 film p -type doping mechanism, and analyzes the way to obtain good performance TCO thin films of p-type under a relatively low temperature. In this experiment, the different elements of SnO 2 p-type doping, and through a different process parameters to prepare p-type SnO 2 Thin Films. Alloy film is deposited by DC magnetron sputtering alloy target (doped metal and Sn atom ratio of 0.2), and then in air thermally oxidizing p-type of SnO 2 film method, respectively, of SnO the 2 film doped with the In, Ga-doped test, succeeded in obtaining a the p type SnO 2 : In and SnO 2 : Ga transparent conductive film. Found that obtained by the oxidation of the temperature range of 600 ° C to 700 ° C heat SnO 2 : In thin film, the average transmittance in the visible range can reach more than 80%, the hole concentration can reach up to 9.61 × 10 18 cm -3 . But prepared in the same manner as with the p-type SnO 2 : Ga film electrical properties ratio of SnO 2 : In the film Poor. Show that on the the Magnetron Sputtering p-type SnO 2 film doped In more effective than the Ga-doped. Experiment by reactive sputtering deposition of SnO 2 : In film, their electrical properties far and deposited alloy film first, and then prepared by thermal oxidation SnO 2 : In film. The paper also by magnetron sputtering target deposition prepared Cu doped SnO 2 film. But experimental results showed that the copper does not enter the alternative bit of Sn becomes double acceptor, but exist in the form of copper oxide. Therefore not achieve the desired p-type doping, but in the lower the temperature of the thermal oxidation, the thin film showing a weak p-type conductivity characteristics, which may be the presence of small amounts of the p-type conductivity in the film of Cu 2 O due. Further, doped to increase or the temperature rise of the thermal oxidation of the amount of Cu would result the Cu doped of SnO 2 of the crystal structure of the film from the orthogonal structure into tetragonal structure.

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