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Polymer electroluminescent devices cathode modified and carrier transport properties

Author: GaoJun
Tutor: GuPeiFu；YeHui
School: Zhejiang University
Course: Optical Engineering
Keywords: Polymer Electroluminescent Electrode improved Double-layer cathode structure Carrier transport properties
CLC: O462
Type: Master's thesis
Year: 2006
Downloads: 95
Quote: 0
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Abstract


The polymer electroluminescent light-emitting devices (PLED) from the process in terms of simple structure, making short process, process simple without high-temperature, precision easy to control, and less investment in equipment. Its performance with low power consumption, low driving voltage, large viewing angle, high brightness, rich color and other characteristics, in particular, can be fabricated on flexible substrates which produce foldable products. It is because of these advantages, the PLED devices more and more to attract people's attention, is increasingly becoming one of the research areas of the new generation of display technology. This paper describes the structure of ITO / PEDOT: PSS / MEH-PPV / buffer / Al of PLED device fabrication process and the performance of the discussion and analysis, respectively comparative analysis of whether to join the PEDOT: PSS as a hole transport layer, Ba or Al monolayer cathode, Ba / Al or BaO / Al bilayer cathode, and with different concentrations of MEH-PPV PLED performance. For further understanding of the working principle of polymer electroluminescent device, the carrier transport properties of PLED device and the IV characteristic curve simulated. PLED device performance of the merits obtained under various conditions were measured and analyzed. The experiment showed that: Member PEDOT: PSS as a hole transport layer may be the luminous intensity of the device increased by 120%, while the starting voltage of the device to reduce 3V; using Ba as the cathode material of the device so that the luminous intensity of the device increases with Al cathode regardless BaO or Ba as the buffer layer at the cathode of the device can greatly enhance the performance of the device, and Ba as the buffer layer than as a monolayer cathode of the device the effect of improving the performance of the device is more obvious; change device 3 times; MEH-PPV concentration is the same, this will have an important impact on the performance of the device. The simulation of the carrier transport properties of the interior of the device. The results showed that the internal device of the carrier mobility and concentration by its location has little effect within the device, however, the temperature and the electric field strength of the carrier mobility and concentration has a significant impact Quedui contained. IV characteristics of the structure of ITO / MEH-PPV / Cathode PLED device simulation using the the SCLC model of FN tunneling model. The results found that the FN tunneling model simulated the PLED device IV characteristic curve more well coincide with the actual results. Meanwhile, based on the FN tunneling theoretical simulation of the relationship between the thickness of the layer for the device current and BaO, and the results can be well explained the experimental results obtained.

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CLC: > Mathematical sciences and chemical > Physics > Vacuum Electronics (Electronic Physics ) > Cathode electronics
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