TN304.23,Of Ⅲ - Ⅴ compound semiconductor

About 20 item dissertation in line with TN304.23,Of Ⅲ - Ⅴ compound semiconductor query results,the following is 1 to 50(Search took 0.076 seconds)

Theoretical and Experimental Research onⅢ-Ⅴ Semiconductor Nanowires and Related Axial Heterostructures,LvXiaoLong/Beijing University of Posts and Telecommunications,0/39
Test and Analysis of Performance of Electromechanical Coupling Based on AlGaN/GaN HEMT Micro-cantilever Device,ZhangZuoZuo/University of North,0/47
Study on the Dislocation Characteristics of GaAs/Si and InP/GaAs Metamorphic Wafers,XiongZuo/Beijing University of Posts and Telecommunications,0/7
Theoretical Study on Electronic Structures and Optical Properties of Doped GaAs,SuLei/Dalian University of Technology,0/130
Effect of Localized States on the Optical Properties of InGaN/GaN Multiple-Quantum-Well Structures,GuoHongYu/Shandong University,0/147
Investigations on the Properties of Ⅲ-Ⅴ Nitrogen and/or Boron Incoporated Compounds and GaAs Nanowires,ShuWei/Beijing University of Posts and Telecommunications,0/266
Theoretical and Experimental Research on Axial Double Heterostructure Nanowires,GengHui/Beijing University of Posts and Telecommunications,0/9
Research on Surface Damage of GaAs Induced by Continuous and Nanosecond Pulse Laser,QiHaiFeng/Shandong University,1/408
Study on the Influence of Defect Distribution and Process Design on the Performance of GaN-based Devices,WangFuXue/Nanjing University,0/305
Research on Structure and Electrooptical Characteristic of Gallium Arsenide Clusters,MaDeMing/Xi'an University of Technology,1/228
Research on Free-Standing GaN Substrate,HuangHua/Changchun University of Science and Technology,0/180
Investigation on Defects and Electrical Properties of Ion-Implanted Large Diameter SI-GaAs,WangNa/Hebei University of Technology,0/80
Effects of Thermal Annealing on Defects and Electrical Properties in Large Diameter LEC SI-GaAs,LiuHongYan/Hebei University of Technology,0/43
GaN-based HEMT Device Integration and the Output Characteristics Research,TangJianJun/University of North,0/90
The Technology of Liquid Encapsulated Czochralski Gallium Arsenide Crystal Growth,ZhouChunFeng/Tianjin University,2/191
Research of Polished Technology of VB GaAs Wafers,YangHongXing/Tianjin University,0/67
Study on the Surface-State of GaAs Polished Wafer for the Use of LED,JiXiuFeng/Tianjin University,0/133
Ⅲ - Ⅴ semiconductors AlAs transition metal clusters in first-principles study,QiuYao/Sichuan Normal University,0/17
Preparation and Characterization of the Al_1-xIn_xN Films,TanYongLiang/Shandong University,0/84
Ⅲ - Ⅴ compound semiconductor solar cell characteristics of the interface,WangLiangXing/Fudan University,0/134