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A Study on Intermixing of InGaAsP/InP QW Structure Induced by Phosphorus Ion Implantation

Author: ChenJie
Tutor: ZhaoJie
School: Tianjin Normal University
Course: Condensed Matter Physics
Keywords: Phosphorus ion implantation Quantum well intermixing Bandgap blue shift Photoluminescence spectra Transmission electron microscopy
CLC: O471
Type: Master's thesis
Year: 2006
Downloads: 53
Quote: 0
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Abstract


Photonic integrated circuit (PIC) and optoelectronic integrated circuits (OEIC) fabrication of the device, the quantum well intermixing (QWI), monolithic integration process as a very effective means of its process is simple, and can effectively adjust the quantum well material bandgap become a focus for researchers. Quantum well intermixing technology mainly includes the following methods: Impurity-induced diffusion (IID), ion implantation induced disorder (IICD) light absorption induced disorder (PAID) and impurity-free vacancy diffusion induced disorder (IFVD). Effect To compare IICD and IFVD of disorder-induced quantum well, the paper first with phosphorus ions (P ) injection induced quantum well disorder have the same emission wavelength InGaAsP / InP multiple quantum well . In order to study the the IICD art ion implantation depth on QWI designed having a different emission wavelength of the InGaAsP / InP double-quantum well structure, and IICD studied the material bandgap change. First, the ion implantation induction of InGaAsP / InP multiple quantum well mixed experiments, in order to compare the IICD and IFVD effect, we prepared three sets of samples: sample pure ion implantation; first phosphorus ion implantation, and then PECVD growth 200nm SiO 2 sample annealing covering layer and first grown by PECVD 200nmSiO 2 as an ion implantation mask, then phosphorus ions are injected into the sample. Simulation TRIM-2000, and the ion implantation energy used 160keV to 780 ° C rapid thermal annealing (RTA), 30 seconds, and then under high purity N 2 of protection. Light photoluminescence (PL) method tests bandgap blue shift, and the results showed that: first ion implantation then coated with 200nm SiO 2 obtained bandgap blue shift compared to the pure ionic implantation, while pure ion implantation method compared coated 200nm SiO in 2 membrane, and then subjected to ion implantation method, the obtained blue shift large. Gap blue shift of the sample obtained by the three methods with the increase of the implantation dose increases, then tends to be saturated, and found that the corresponding sample bandgap blue shift amount of the maximum of the ion implantation dose of about and 10 13 . The experimental results also illustrate two ways to combine bandgap blue shift is mainly caused by the ion implantation induced, but the SiO 2 dielectric film on the quantum well intermixing also play a catalytic role. In order to study ion implantation depth the influence of quantum well intermixing in the distance to the surface of the sample at different depths growth emission wavelength different from the double-quantum well structure, a sample from the surface closer to the light wells wavelength of 1.52μm, and a deep well wavelength 1.59 μm, in another sample, the two quantum well emission wavelength order contrary. When certain energy ion implantation induced quantum well intermixing, due to the different depths of the two wells, so obtained mixed effect. Simulation TRIM-2000, and the ion implantation energy of 120keV,

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