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SiGe device circuit model parameter extraction

Author: WangShengRong
Tutor: YangZuoHua
School: University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: SiGe HBT Strained silicon Parameter Extraction VBIC model MOS LEVEL3 model
CLC: TN303
Type: Master's thesis
Year: 2007
Downloads: 217
Quote: 0
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Abstract


With the rapid growth of wireless communication technology , Si-based semiconductor devices and integrated circuits technology can not meet the needs of their development . SiGe devices by virtue of its frequency characteristics, low noise figure , high integration , low cost and compatibility with conventional Si technology advantages demonstrated in the field of wireless communications development potential. Production process of the device and circuit design and manufacturing are inseparable device model parameter extraction , so the parameter extraction device and SiGe technology research has important significance. Paper through the device circuit model and MOS LEVEL3 VBIC analysis , put forward the corresponding model parameter extraction method, a model parameter extraction strategy , and the strategy successfully applied to SiGe HBT devices VBIC model and strain Si PMOS devices MOS LEVEL3 model parameter extraction , to obtain good results . Through the SiGe HBT devices DC characteristics and frequency characteristics analysis, proposed SiGe HBT device electrical parameters and the relationship between structural parameters and optimization design principles. Two-dimensional numerical simulation software Medici of the device was simulated , designed a planar structure of SiGe HBT devices , and in the CLP Group 24 were taped experiment . Test results show the common-emitter current gain β reaches 200 , the cutoff frequency of 2.7GHz. Analyze and modify the VBIC device model , the main parameters of the model proposed extraction method and the corresponding device model parameter extraction strategies . Using the device test data, extracting the flat structure model SiGe HBT device VBIC current model parameters . Device Transfer saturation current IS is 5.878E-16A, forward and reverse Early voltage VEF, VER , respectively 25.19V and 3.187V. In MOS LEVEL3 device models based on the study , presented strain Si PMOSFET MOS LEVEL3 model parameter extraction method and mention reference policies. Use Angelent 4155a strain Si PMOSFET output characteristic curve and transfer characteristics were tested and extracted MOS LEVEL3 model parameters . Device threshold voltage VTO zero bias is -0.4568V, low- field electron mobility UO reach 114.9cm 2 / Vs, THETA mobility modulation index is 0.1093V -1 .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Structure,the device
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