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Effects of Thickness and Substrates on Crystal Structure and Characterization of the FeS2 Films

Author: ZhangXiuJuan
Tutor: MengLiang
School: Zhejiang University
Course: Materials Science
Keywords: FeS2 films Organizational structure Optical and electrical properties Crystal orientation Photoelectric conversion efficiency
CLC: TB383
Type: Master's thesis
Year: 2003
Downloads: 142
Quote: 1
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FeS 2 (pyrite) is a suitable band gap (E g ≈ 0.95eV) and a higher light absorption coefficient (λ ≤ 700nm, α ≥ 5 × 105cm < SUP> -1 ) of a semiconductor material, and its constituent elements reserves rich non-toxic, can be used in film form in the preparation of the solar cell, a lower cost, as compared with existing semiconductor materials, is a relatively studies have the value of the solar cell material. In this paper, the the Fe films sulfide prepared FeS 2 film. In the same vulcanization process conditions, respectively, were prepared on Si (111) and glass substrate film thickness FeS 2 , the thickness of film organizations and photoelectric properties. The uses of FeS 2 / TiO 2 composite film as the solar cell photovoltaic electrode prepared the solution solar cell test sample, measurement of the photoelectric conversion efficiency of the battery, the thickness of the film the influence of the photoelectric conversion efficiency. In the Si (100), Si (111), on the base of the Al, TiO 2 and glass five prepared the same thickness as FeS 2 film, the substrate of the film organizational structure. The research results show that the curing temperature of 400 ° C curing pressure 80kPa, the cure time to time 20h, Fe film full formation of FeS 2 . The Si (111) substrate prepared FES 2 film, as the film thickness increases, the band gap and the light absorption coefficient of the high absorbency zone is reduced. When the thickness is less than 330nm, with the increase in the thickness of the film grain size increases, but the lattice constant is reduced; when the thickness is larger than 330nm, the film grain size decreases with increasing thickness, the lattice constant increases. FeS 2 film on the glass substrate, when the film thickness is increased from 70nm to 300nm, the film grain size and the lattice constant decreases. When the film thickness is increased from 300nm to 600nm, the grain size and the lattice constant of the film are increased. With the increase in the film thickness, FeS 2 reducing the carrier concentration of the film, the resistivity is increased, the light absorption coefficient of the high absorbency zone is reduced, the film tends to p-type conductivity. The film thickness is less than 130nm, the forbidden band width with a film thickness increases, but when the thickness is larger than 130mn, the band gap decreases with increasing film thickness. Photoelectric conversion efficiency measurements of of FeS 2 / TiO 2 solution very prepared composite film solar cells solar cell test samples the results show that with the increase of the film thickness conversion efficiency decreased and then increased the overall value at a low level. Show that, by changing the substrate crystal in the Si (100), Si (111), Al, TiO 2 and 330nm thick glass substrate prepared FES 2 film for analysis type to a certain extent control of FeS the 2 thin film growth crystal Zhejiang University, Master's Thesis Zhang Xiujuan: thickness and the base of the structure and performance of FcSZ film postural distribution. When the 51 (100) 51 (111), and A is grown on the substrate, FeS: thin film obtained (200) preferred orientation, growth can be obtained simultaneously in Tio: on a substrate (200) and (220) preferred orientation. Amorphous glass substrate film bit distribution is not obvious. Different types of substrate lattice, can also lead to changes in the degree of lattice distortion and grain size in addition to the change to the distribution of the thin film transistor bit different film interface mismatch. When the substrate is an amorphous structure or interface larger the mismatch, Fes: crystal orientation distribution is mainly affected by the surface energy and the grain growth direction control, the film having a smaller lattice distortion and finer grain. When the base is crystalline and interfacial mismatch is small, FeS: crystal orientation distribution is also affected by the surface energy and grain growth direction control interface strain energy control, the film is easy to form a large lattice distortion and the relatively coarse grains.

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