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Study on Properties of ZrW2O8 Thin Films Prepared by Radio Frequency Magnetron Sputtering

Author: FuTingBo
Tutor: ChengXiaoNong
School: Jiangsu University
Course: Materials Science
Keywords: radio frequency magnetron sputtering ZrW2O8 thin film thermal expansion coefficient Dielectric constants transmission
CLC: TB383.2
Type: Master's thesis
Year: 2007
Downloads: 72
Quote: 0
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Abstract


Negative thermal expansion （NTE） material, ZrW2O8, which exhibits large isotropic negative thermal expansion over its entire stability range from 0．3K to 1050K, has been paid particularly attention in material field recently. ZrW2O8 have very important practical applications in micro-electronics, optics, communication, medical fields and so on. Recently, the study of preparation and property of ZrW2O8 powders and bulks has been matured, but the study of ZrW2O8 thin film is only in initial step. The synthesis of ZrW2O8 film and its property were studied in this paper.In this paper, as-deposited thin film was prepared by Radio frequency magnetron sputtering using ZrW2O8 ceramic target and the ceramic target compounded with ZrO2 and WO3 powder as targets. On the base of preliminary studies, ZrW2O8 film of high purity was obtained by optimizing sputtering parameters and annealing technology. The phase and the surface morphology of the film were studied using X-ray diffraction （XRD）, Scanning electron microscopy （SEM） and Atomic force microscopy （AFM）. The thermal expansion property, dielectric property and transmission property were studied by temperature XRD, Analyzers and Spectrophotometer, respectively.The results indicated that the precursors films prepared by different as-deposited films were amorphous, the structure and the purity of the obtained ZrW2O8 film will be influenced by the heating process. ZrW2O8 film with good crystallization could be obtained by heated at 740℃for 3min in quick cooling, and its purity can be enhanced by increasing the heating time. But the pure ZrW2O8 film without ZrO2 and WO3 can not be obtained at 740℃by any way. Pure ZrW2O8 film could be obtained at 1200℃for 8 min by quick cooling using different precursor film.The surface of the obtained precursor film is smooth without crystal grain. The crystal grain of the ZrW2O8 film heated at 740℃grow up obviously, the size is average. The crystal grain of ZrW2O8 film obtained by quick cooling is small, the structure is condensed.ZrW2O8 film shows excellent negative thermal expansion property, its thermal expansion efficient is-10．08×10-6 K-1 from room-temperature to 700℃. Dielectric constants of ZrW2O8 film is 10 during the higher frequency. ZrW2O8 film shows good transmission during the visible spectrum and infrared spectrum.

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CLC: > Industrial Technology > General industrial technology > Materials science and engineering > Special structural materials
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