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The Effect of Annealing Treatment on Reverse Breakdown Voltage of Schottky Diodes

Author: HeLiLi
Tutor: YinJingHua
School: Harbin University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Schottky barrier diode Barrier height Annealing Surface states Interface layer
CLC: TN386
Type: Master's thesis
Year: 2007
Downloads: 252
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Abstract


Schottky barrier diode (Schottky Barrier Diode, SBD) has the advantages of low-power, high-current, high frequency, and is widely used in the field of microwave communication IC circuitry. Current the Si material SBD reverse breakdown voltage is generally low, for two reasons: First, the metal contact with the edge of a small radius of curvature of a strong electric field strength lead to reduced reverse voltage value; barrier making process in introduction of surface states and interface layer of the semiconductor surface is also seriously affect the SBD reverse voltage value. For the first question, at home and abroad has a lot to solve the structure of the program and effectively used, and how to reduce the impact of surface states and interface layer and still have not found a better solution. In this paper, the problem of systematic theoretical analysis and experimental research, the results of its research to improve the performance of the device has a guiding significance. In this paper, the existing domestic electronics companies prepare Schottky diodes conditions, resistivity of 2.85 to 3.15Ω · cm epitaxial layer produced two Schottky diode samples, one sample annealing after sputtering Cr and Ni, respectively processing, while another sample is not subjected to annealing treatment. Due to the presence of a metal - semiconductor contact surface states and the interface layer, the barrier height of the actual SBD devices by the great influence of surface states and the interface layer. These two parameters is not a good method of extraction, which seriously impedes analysis and model of the device characteristics. In this study on the basis of the thermal electron emission model, establishing an extraction of characteristic parameters of the Si-based SBD devices theoretical model, based on this model, the performance of the two samples were tested, and the calculated ideal factor of annealed and unannealed samples respectively zero field, the potential barrier height is 1.01 and 2.13, respectively, 0.70eV and 0.72eV, the concentration of the surface states were 5.5 × 10 15 cm -2 eV, -1 and 4.3 × 10 12 cm -2 eV -1 interface layer capacitance were 9.0 × 10 -4 F · cm -2 and of 5.4 × -6 F · cm -2 , surface states performance level 0.81eV and 1.1eV, the reverse breakdown voltage of 101V and 56V. The results show that the annealing treatment can significantly improve device reverse breakdown voltage. The microstructure of the cross section using Scanning Electron Microscopy of the two samples, using spectroscopy test element distribution. The results show that the epitaxial Si surface of the annealed sample and the metal Cr layer is formed between the chromium silicide film having a thickness of 50 nm, the of chromium silicide / Si interface and Cr / chromium silicide is very straight; unannealed samples barrier is provided by the epitaxial Si the metal Cr direct contact constitute its contact interface bending uneven, there is a thickness of 1 nm oxygenated buffer layer; metal region consisting of annealed samples of Cr and Ni, to form a tightly packed columnar nickel-chromium alloy crystal; unannealed samples the region, there is a columnar grain structure. The experiments show that the microstructure of the samples annealed help to improve the reverse breakdown voltage.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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