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Preparation and Characters of TiAlN Thin Films by Magnetron Sputtering

Author: LiuZhiYuan
Tutor: ZhaoGuangBin
School: West China University
Course: Materials Science
Keywords: magnetron sputtering TiAlN XRD microhardness bonding
CLC: TB383.2
Type: Master's thesis
Year: 2008
Downloads: 378
Quote: 1
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Abstract


Physical vapor deposition method for rigid thin films has been developed in recent years with the emergence of new technologies. By using these new technologies, the performance of the matericals can be enhanced, working efficiency can improved and resources concerned can be saved.In this paper, it is reported that a unbalanced magnetron sputtering is designed and set up in our laboratory. the process of the unbalanced magnetron sputtering is studied. By optimaling the process, TiAlN thin films were deposited on the surfaces of GCr15 bearing steel and YG6 alloy. The structures, composition and parameters of the thin films were analyzed.The microstructures of the samples are studied by x-ray-diffrature（XRD）. the results show that: TiAlN its films have been succesfully deposited on the surficials by this equipment. phases Ti3Al2N2, AlTi3N, Ti3AlN, TiN, AlN and Ti2N had easily found in the thin films.The phases of the samples change with parameters of the prcesses.（hcp） structure of Ti3Al2N2 and ZnS structure of Ti3AlN were found in the samples .When the Ti cement and Al cement changes, TiN, AlN and Ti2N are found with different nitrigen flow.In this paper, the microhardness of this surface, morphology and microstructure of the thin films are studied. The facture to affect the density of the thin films have been exploned. The ratio of electric current Ti and Al have a affect on the microhardness of the thin films. The optioned process is found for maxium microhardness of this film.By analysing the fracture of the film, it is shows that the samplies with the chases of 3μm, is good in the grow of the thin films, in which columnan thin grain is formed. Scratch experiment shows the thin filmsbind tightly with the substrates. The bondings force can be 42N, on even higher.Energy spectrum analysis shows thin films are composed of Ti、Al and N

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