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Structures Analysis and Luminescence Characteristics of Amorphous SiN_x Films Prepared by Magnetron Sputtering

Author: ZuoYang
Tutor: YiLiXin
School: Beijing Jiaotong University
Course: Optical Engineering
Keywords: SiN_x amorphous thin films Magnetron sputtering Film structure Photoluminescence Electroluminescent
CLC: O484
Type: Master's thesis
Year: 2008
Downloads: 137
Quote: 0
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In recent decades , silicon-based materials has rapidly developed into a new generation of optoelectronic information materials have very important applications in light-emitting devices and optoelectronic integrated technology . Due to quantum confinement effect , embedded in a silicon oxide or Si / SiO 2 superlattices nanocrystalline silicon (Nc-Si) has become a hot research and cutting-edge . Nevertheless, because the silicon nitride is a wide band gap semiconductor (band gap of approximately 5.3eV ) , with a strong light emission , and the narrower band gap than silica is more conducive to the carrier injection , so amorphous SiN x film has become an ideal candidate material for study silicon complex light . Paper, film, magnetron sputtering growth on single-crystal silicon substrate amorphous SiN x the SiN x amorphous thin film deposition mechanism , as well as film structure . We combine the Fourier transform infrared (FTIR) spectroscopy analysis found that the absorption band of the film of amorphous SiN x : With the increase of the sputtering power , the absorption bands of the Si - N bond is gradually red shift; SiN x annealing , then gradually blue shifted under a sufficiently high temperature phase separation occurred , generating the Nc-Si and Si 3 N-th . By X-ray photoelectron spectroscopy (XPS) analysis , with the raise of the sputtering power , SiN X is the film the stoichiometric ratio (x) decreases, successively formed in the thin film Si-N- Si 3 , Si-N 2 -Si 2 , Si-N 3 -Si and Si -Si < sub> 4 bonding structure . Film photoluminescence luminescent (PL) spectra analysis , we believe that its light emission from the conduction band and the valence band, and a silicon suspension between the key and the N-Si-O , such as additional energy levels of the electron radiation transitions ; final film electrically EL characteristics of a preliminary study .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics
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