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The Preparetion of AZO Powders and Ceramic Targets

Author: WangZhiYong
Tutor: PengChaoQun
School: Central South University
Course: Materials Science and Engineering
Keywords: Al-doped ZnO UV-siv Photoluminescence Two-stepssintering ceramic targets relative density resistivity
CLC: TN304.2
Type: Master's thesis
Year: 2013
Downloads: 41
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Abstract


With the rapid development of the field of semiconductor, computer and solar energy, ZnO materials would be used in high-definition flat-panel dsplays, transparent electrodes, and optoelectronics devices. In this paper, Al-doped ZnO powders and ceramic target were comperhensively analyzed. Doping theory, typical properties, preparation techniques and the developing of ploymer net gel were discussed.The progress and method of polyacrylamide polymer gel were studied. The influence of optical performance on A1doping concentrations and the calcining process of precursor were analyzed. The sintering processes of AZO ceramic targets by two-step sintering were analyzed. The influence of A1doping concentrations, sintering temperature, holding time and hate rate on the microstructer, relative density, resitivity of AZO ceramic targets were investigated.The results showed that:(1) The grain size of AZO powder was gradually reduced with increase of the Al doping concentration. Al doping concentration was8%, while the calining temperature was600℃. However, the second phase ZnAl2O4was discoved, while the calining temperature was750℃and Al doping concentration was5.5%.(2) A blue shift of the UV-vis absorbance wavelength of AZO powders was firstly observed and later red shift with A1doping concentrations, while a red shift with the increasing calining temperature. The optical band gap of AZO powder (x(Al)=5.5%) was3.39eV(366nm), when the caniling temperature was550℃and holding time was1h. The UV peak of406nm, blue emission peak of430nm are detected in both not doped and doped samples.(3) It was shown that the AZO ceramic targets was wurtzite structure. And the lattice constants a and c tended to be decreased and then increased with Al doping concentration increasing.Zinc aluminum spinel phase (ZnAl2O4) was observed while Al doping concentration was enough.(4) The relative density of AZO ceramic targets were gradually reduced with A1doping concentration increased, while increased with hate rate increased. And the relative density of AZO ceramic targets was increased and the resistivity was reduced with holding time increased. When the sintering temperature (T1) was1400℃, hating rate (v1) was10℃/min, holding time (T2) was1350℃, the resistivity of AZO ceramic garget (w(A12O3)=1.5%) was2.9×10-2Ω·cm.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor
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