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In recent years , copper indium diselenide and copper indium sulfide two kinds of semiconductor nano- materials due to their applications in solar cells , has been widespread concern. In this paper, inexpensive and easier to get the S- element partially replace CuInSe2 Se elements , both to improve the performance of CIS photovoltaic cells , but also can reduce the cost of battery components , the alloy CuInSexS2-x will become a very promising solar cell materials . This article was prepared by hot injection CuInSeS2-x and Cu2-xInxSn1-xSe3-x two alloys , found the best synthesis process proved its alloys nature , so that the size of the sample morphology and controllable to achieve a bandgap changes in the composition of the alloy is adjustable within a certain range . Presented at normal temperature drops tablets prepared CISS (CuInSexS2-x) films new method using rare gas anneal treatment CISS film , basic properties of the films , show that the method is feasible , to explore a method for preparing thin films CISS new methods. As used herein, means the operation more simple , less toxic , more cheaply , more conducive to industrial production.
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