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The Studies on Fabrication and Characteristics of ZnO Based Ultraviolet Laser Devices

Author: ZhuHai
Tutor: YaoBin；DanChongXin
School: Graduate Schoo,Chinese Academy of Sciences
Course: Condensed Matter Physics
Keywords: ZnO thin films MBE MOS structure Heterostructures Laser
CLC: TN248
Type: PhD thesis
Year: 2011
Downloads: 88
Quote: 0
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Abstract


ZnO material has a wide band gap (3.37 eV ) , large exciton binding energy (60 meV) , etc. , in the ultraviolet light-emitting diodes , semiconductor laser has a broad application prospects . Blank for international ZnO electrically pumped laser lack MgZnO material DUV laser . In this thesis, using atomic layer deposition , molecular beam epitaxy , magnetron sputtering prepared ZnO-based UV light emitting devices . ZnO random laser output of the low threshold value and ZnO heterostructure pn junction electrically pumped stimulated emission. In addition, the band DUV the MgZnO electric injection stimulated emission preliminary study and explore . The main results are as follows: (1) for current random gain medium p-type doping is difficult to implement the collision from the dielectric layer of the holes generated random gain medium holes thought to construct the Au / MgO / ZnO structure devices . Under ambient conditions , a threshold current of 43 mA , a ZnO random laser output is obtained in this structure . In order to reduce the random laser threshold current , through the introduction of the insulating ZnO layer as the hole- generating layer , reducing the electron - hole pairs ionization threshold , the success of the laser emission threshold current is reduced to 6.5 mA . (2) for the current MgZnO material effective p-type and n-type doping is difficult to implement , and we use MgO layer hole impact ionization generation MgZnO luminescent layer to provide a hole carrier , while using the n - type ZnO as a MgZnO emitting the layers provide electronic ideological achieve MgZnO materials wavelength is electrically pumped laser in the vicinity of 330 nm emission . Using a a composition graded MgxZn1-xO gradient barrier layer to improve carrier injection ideas realized for the first time the wavelength of 276 nm DUV foreign injection luminescence in a cubic phase MgZnO . (3) using the dielectric layer to adjust the idea of the carrier transport , to overcome the a heterojunction pn junction of the directly matching ZnO the ZnO luminescent weaker presence , to achieve the purpose of electrons and holes in the ZnO luminescent layer enriched . P-GaN/MgO/n-ZnO structure to achieve stimulated emission threshold current of 0.8 mA . Further attempts the ZnO is replaced by a band gap greater MgZnO material to obtain a wavelength in the vicinity of 374 nm of excitons type electrical luminescence .

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