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Study of Doping and Dielectric Properties in Lead-Free BaTiO3-based Ceramics

Author: LiYuanLiang
Tutor: QuYuanFang
School: Tianjin University
Course: Materials Science
Keywords: Ceramics Doping Dielectric properties Diffuse phase transition
CLC: TQ174.1
Type: PhD thesis
Year: 2009
Downloads: 173
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With a perovskite structure BaTiO 3 -based ceramics as an object of study, respectively Sm 2 O 3 doping on (BaxSr1- x) TiO 3 , Ba (Sn x Ti 1-x ) O 3 and Ba (ZrxTi1-x ) O 3 the a ceramic microstructures and dielectric properties, and Y 2 O 3 NiO doped (Ba x Sr1-x) the TiO 3 ceramic microstructure and dielectric properties. Sample microstructure and dielectric properties, revealing the the Sm 2 the O 3 , the Y- 2 O NiO doping mechanism in BaTiO 3 -based ceramics. The results found that: the Sm 2 the the O 3 and Y 2 the O 3 (Ba x Sr 1-x ) TiO 3 ceramic, with increasing doping amount of Sm 3 and Y at 3 < / sup> is a substitution position, is in the initial stage of their doping the Sm 3 and Y 3 enter the lattice A bit position, while in its doping content exceeds a certain amount, by entering the the lattice B bit position-based, this priority replacement result sample with lattice parameters a increase decreases and then increases with the doping amount of sample dielectric constant first increases and then decreases. Both the sample dielectric loss is improved, especially when the Y 3 doping amount of 1.0 mol%, the sample dielectric loss decreased to 0.0015. Both doping results but no significant difference is that the Y 3 doped specimen showed a diffuse phase transition characteristics, and Sm 3 doped. The NiO added to (BaxSr1,-x) TiO / sub> ceramic 3, only a small part of Ni 2 ions into the crystal lattice of the B-site substituted Ti4 ion, resulting in a sample lattice parameter is increased marginally, after NiO mainly gathered in the vicinity of the grain boundary, forming BST / NiO composite material. Sample dielectric constant decreases with the increase in the amount of NiO doped dielectric temperature spectrum shows diffuse phase transition characteristics of the samples containing Ni, with the doping amount of the increase, the more obvious effects, which also makes the temperature of the sample dielectric The spectrum has been greatly improved. The sm 2 O 3 join the main crystalline phase does not change BTS10 and BZT20 of ceramic structure, compared with the blank sample doped trace Sm 3 will decline in grain size. With Sm 2 O 3 increase of the doping amount the BTS10 and BZT20 of ceramic specimen permittivity first increases, decreases, when the sample dielectric constant maximum , the dielectric loss is also the highest. Of BTS10 and BZT20 of ceramic sample Tm and Sm 2 O 3 variation between the doping amount roughly similar, the difference is that BTS10 ceramic Tm, Sm 2 O 3 doping the starting phase does not change. The doped Sm 2 O 3 BTS10 and BZT20 ceramic specimens with diffuse phase transition characteristics, but both for two distinctly different First, BTS10 blank sample itself does not have a diffuse phase transition characteristics, the while BZT20 blank sample that has a diffuse phase transition characteristics. Second, with the Sm 2 O 3 doped amount of the increase, BTS10 ceramics sample dispersion characteristics consistent with enhanced while BZT20 ceramic sample dispersion characteristics is weaker after first enhanced. This difference description in Sm 2 O 3 doped starting stage, part Sm 3 enter BTS10 ceramic lattice B bit position In the BZT20 ceramics, both sample Tm-doped Sm 2 O 3 difference of the initial stage of change also illustrates this point.

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