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Study of Compact PLC Devices in SOI and Arrayed Waveguide Gratings

Author: TangYanZhe
Tutor: WangYueLin
School: Zhejiang University
Course: Microelectronics and Solid State Electronics
Keywords: Waveguide grating Compact structure Waveguide devices SOI material Array Ridge waveguide Of silicon on the insulating layer Planar waveguide devices MOEMS VLSI
CLC: TN252
Type: PhD thesis
Year: 2004
Downloads: 319
Quote: 1
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Abstract

Of silicon on the insulating layer (SOI) material having good optical and electrical properties, a mature integrated circuit (IC) production processes and equipment can be applied or draw in the SOI planar waveguide device production; silicon Kerr (Kerr) effect, Franz - Keldysh (Franz-Kedysh) effect and the plasma dispersion the (Plasma Dispersion) effect electro-optic effect can be applied in the production of electro-optic modulator and electro-optical switches. SOI material development of very large scale integration (VLSI), MOEMS (MOEMS) and planar lightwave circuit (PLC) provides a common platform, making optical devices, electronic devices and mechanical fasteners integration becomes possible. Therefore, in the future development of optoelectronic devices, SOI material will play an important role. Large refractive index difference SOI materials ridge waveguide structure particularity brings some special properties, must-depth exploration of theory; ridge waveguide bend radius is constrained to some extent improved performance SOI waveguide devices development is limited, making multi-channel, multi-function devices. The above problems, the present paper to explore various characteristics of the SOI waveguides and gives a detailed calculation result, the SOI waveguide device, the loss of the waveguide transition zone overlap integral method with three-dimensional power calculated for the first time, this method considers ridge waveguide mode of distribution of the coupling efficiency of the transition zone. Papers for the first time to design and produce integrated waveguide on SOI-turn micromirrors (IWTM), KOH anisotropic etching characteristics of silicon micromirror surface to produce a very bright rms roughness of only 5.19nm, and because the mirror is etched crystal surface, with the wafer surface is vertical. The approximately the experimentally measured IWTM loss 1.5dB / mirror, the loss is mainly derived from the horizontal shift between the mirror and the waveguide, can make the performance is improved by improving the position control precision of lithography precision and mirror corrosion of Papers on SOI IWTM used in the production of optical power splitter and arrayed waveguide grating (AWG), and to achieve a very compact waveguide devices. Thesis, the the SOI material on the multimode interference. 4 × 4MMI sheet measured additional losses between 1 ~ 2dB, uniformity is 0.19 ~ 1.48dB, a chip length of about 2cm. MMI structure instead of the ordinary direct bifurcation Y branch structure, optimizing branch performance, and the experimental results in good agreement with the theoretical calculation. The experimentally measured based on the 1 × 2MMI Y bifurcation structure of compact 1 × 4 power splitter chip extra loss of approximately 3.1dB, uniformity of about 0.4dB. Compared with ordinary splitters Y branch structure (loss of 4.3dB, the uniformity 1.8dB), device performance has been markedly improved. The loss is substantially translational error caused due to the waveguide and the mirror. 1 × 2MMI performance has reached a very good level, close to the theoretical value. The device structure is very compact in the chip size of 1cm × 1cm produced five devices. AWG DWDM optical network system devices abroad sale, but the domestic level is not high, the majority of theoretical work, no breakthrough results on the experimental results. Paper from the process from the point of departure of the design method of the AWG, the detailed calculations of the silica material and SOI material of AWG device fabrication process tolerance requirements. The thesis discusses the development of SOI AWG, given the stage of conclusion. The paper with the actual process requirements designed based on the the silica materials AWG, to be achieved by foundries produce practical AWG device. 8 × 8 silica AWG package between 4 ~ 8.2dB measured insertion loss values ??for all channels, all adjacent channel crosstalk of less than-23dB, after all non-adjacent channel crosstalk of less than-30dB. 1 × 32 silica AWG package measured insertion loss values ??between 4.2 ~ 7.3dB adjacent channel crosstalk of less than-28dB, non-adjacent channel crosstalk of less than-30dB.

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