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The Studies of the Physical and Chemical Properties of the Surface and Interface of Metal Oxides

Author: XuJinJie
Tutor: WangDeJun；DuZuLiang；LiTieJin
School: Jilin University
Course: Physical and chemical
Keywords: Surface Interface Steady - state photovoltage Oxide film Vanadium oxide Sodium vanadium oxide
CLC: O611
Type: PhD thesis
Year: 2005
Downloads: 729
Quote: 2
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Abstract


This paper discusses several vanadium oxide , sodium vanadium oxide and of Na1 xV3O8 one-dimensional structure of the film preparation and properties ; and the use of steady-state photovoltage Principles and Techniques , explore research on the different thickness of the p- type silicon substrate TiO2 light - voltage characteristics of SnO2 thin film composite oxide film on the interface surface photovoltaic measurement , some innovative results . V2O5 film particle morphology observed in the fused quartz , Si , ITO , Pt sheet substrate formed on size difference , respectively, exhibit conductive characteristics of the bulk phase and a surface - oriented ; molten quartz substrate using a low vacuum and hydrogen reduction hot photochromic properties VO2 film . Different temperature region occurs on the soda glass substrate using sodium ion exchange with sodium ion diffusion is prepared several sodium vanadium oxide films; through the control of film thickness , the heat treatment conditions such as temperature and time on the soda glass substrate the system had a high degree of crystallinity, having a one-dimensional structure for Na1 xV3O8 of the film . Using XRD, XPS , and TEM method to determine the of Na1 xV3O8 one-dimensional structure of the composition , structure and use of the HRTEM the observation Na1 xV3O8 nano with the high-resolution image , combined with electron diffraction to determine the growth direction of the nanobelts ; explore the Na1 xV3O8 one -dimensional the growing conditions and mechanism of the nanostructure , and conductive characteristics and ion exchange properties. To carry out the different thickness of TiO2 of SnO2 thin films and their complex oxide thin film photovoltaic characteristics study to examine the role of the film thickness of the interface as well as the surface with different composite interface surface photovoltaic effect ; different composite structure TiO2 SnO2 thin film composed of the same, but due to the different form the interface with the silicon substrate , the thickness of the composite layer and the surface state of the outer surface of the different changes in their photovoltaic characteristics . Detailed discussion on the measurement of the light - voltage characteristic of the TiO2 surface and interface of the single crystal and a film , and based on the equivalent circuit of the voltage measuring method of steady beam of light voltage and the relationship of the photocurrent ; applied field by comparing the optical voltage, light the current response of the mechanism of action of the electric field may , in turn extended states and localized states , the body phase of the light generated in the interface voltage has a different mechanism .

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CLC: > Mathematical sciences and chemical > Chemistry > Inorganic Chemistry > Chemical elements and inorganic compounds
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