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Rare earth doped optical waveguide alumina applied basic research is still in the stage of research focused on optical performance, materials for rare earth doped optical waveguide structure of alumina, and other basic issues luminescence mechanism little research. In this paper, erbium, ytterbium salt doped sol - gel process and erbium ion implantation Rubo Mu Shi gels were prepared by thin film technology situ doped Er 3 : Al 2 O 3 and Er 3 , Yb 3 co-doped Al 2 O 3 , systematic study of Er 3 , Yb 3 doping concentration and sintering temperature on doped Al 2 O 3 Structural and photoluminescence characteristics, revealing Er 3 in Al 2 O 3 matrix light-emitting mechanism, and Yb < sup> 3 in Al 2 O 3 matrix for Er 3 photoluminescence sensitization. Using erbium doped salt sol-gel process was prepared doped Er 3 : Al 2 O 3 powders and thin films were studied Er 3 doping concentration and sintering temperature on Al 2 O 3 phase structure. Established doped Er 3 : Al 2 O 3 powder doped with 0-20mol%, the sintering temperature of 550-1400 ℃ Er -Al-O system phase diagram, the system exists γ-(Al, Er) 2 O 3 , θ-(Al, Er) 2 O 3 , α-(Al, Er) 2 O 3 , Al 10 Er 6 O 24 and ErAlO 3 and other five kinds of phases, Er 3 doping promote γ and θ-phase amorphization, With the doping concentration, amorphous trend intensified, Er 3 of doping γ → θ and θ → α phase transition temperature increased 10-20 ℃. In the thermal oxidation of SiO 2 / Si (100) substrate was prepared doped Czochralski 0-1.5mol% Er 3 : Al 2 O 3 film, pulling speed of 100mm/min, pulling nine times, the sintering temperature of 900 ℃, the film thickness of 1.2μm, the film is smooth, uniform particles, with the doping concentration , average particle size from 30-50nm to 100-300nm. Film as γ-Al 2 O 3 structure, and has a (110) preferred orientation. Doped Er 3 : Al 2 O 3 has a center wavelength of 1.533μm photoluminescence properties of doped Er 3 : Al 2 O 3 phase structure Photoluminescence characteristics have a significant effect. Doped 1mol% Er 3 : Al 2 O 3 powder, with the sintering temperature from 600 ℃ to 1200 ℃ occurred γ → θ → α phase change, the photoluminescence intensity increases. γ and θ phases photoluminescence bimodal structure, 1.533μm at the main peak, 1.550μm office acromion, α-phase photoluminescence spectra of multi-peak structure, in addition to 1.533μm at the peak, there are other spikes . Er 3 dopant concentration from 0.5mol% to 10mol%, 900 ℃ sintered powder and a small amount θ γ-phase composite structure, the doping concentration is 0.5mol% and 1mol% of the powder photoluminescence stronger intensity, with increased doping concentration, the photoluminescence intensity decreased significantly. Er 3 doping concentration of 0.1-2.0mol%, the sintering temperature of 800-1000 ℃, mixed with γ and θ structure Al 2 O 3 < / sub>, there is a strong photoluminescence intensity and a wide half-peak width, is conducive to preparation of the optical waveguide. The use of group symmetry theory, analyzes γ, θ and α phase structure corresponding photoluminescence spectra. γ and θ phase crystallization lesser extent, Er 3 randomly distributed in O 2 - form octahedral and tetrahedral interstitial, Er 3 around environments vary greatly, resulting in photoluminescence spectra broadening. α-phase high degree of crystallinity, Er 3 in the α phase distribution in O 2 - posed octahedral, Er 3 surroundings small differences appear to characterize the fine structure of the Stark splitting photoluminescence. Note Rubo Mu stone using erbium ions doped in situ synthesis gel Er 3 : Al 2 O 3 films, implantation energy of 45keV, injection a dose of 5 × 10 15 / cm 2 , the thermally oxidized SiO 2 / Si (100) substrate once pulled Er ion implantation 50nm obtained boehmite xerogel films, pulling - injected four times to get doped Er 3 : γ-AlOOH xerogel films, Er peak concentration of 10at.%, 900 ℃ Sintered situ doped Er 3 : Al 2 O 3 films, Er peak concentration to 5at.%, at 200nm thickness distribution within uniform. Note Rubo Mu Shi Er ions doped in situ synthesis gel Er 3 : Al 2 O 3 thin films with high photoluminescence intensity than Er ion implantation Al 2 O 3 -doped formed directly Er 3 : Al 2 O 3 film photoluminescence intensity increased four times faster than using erbium doped salt sol - gel process doped Er 3 : Al 2 O 3 film photoluminescence intensity increased by 10 times, is conducive to fabricate waveguides. Using erbium, ytterbium co-doped sol salt - gel process the 0-1mol% Er 3 ,0-2mol% Yb 3 co-doped Al 2 O 3 powder, Er 3 , Yb 3 co-doped Al 2 O 3 has a center wavelength of 1.533μm photoluminescence properties. With the burning
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