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Silica based high κ material molecular beam epitaxy growth

Author: XuRun
Tutor: JiangZuiMin
School: Fudan University
Course: Condensed Matter Physics
Keywords: High k materials Gate dielectric Molecular beam epitaxy HfO2 Er2O3
CLC: TN304.054
Type: PhD thesis
Year: 2005
Downloads: 220
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Abstract


For continued technology scaling, high k materials are required to replace SiO2 as gate dielectric in the next generation metal oxide field effect transistors （MOSFET）. Two kinds of materials are most promising. One is Group IVB metal oxides such as HfO2 and ZrO2; the other is Group IIIA and Group IIIB metal oxides including Al2O3, Y2O3 and some other rare earth oxides. In this thesis, we have studied the growth and characterization of high k materials HfO2 and Er2O3.Here, the first two chapters introduce the research background and experimental equipments.In Chapter 3, the MBE growth and characterization of HfO2 films are discussed. HfO2 films were grown by electron beam evaporation using a metallic Hf source. Firstly, the basic physical and chemical properties of the as-grown films were characterized by using the corresponding methods. The as-deposited films are stoichiometric and polycrystalline, as verified by X-ray spectroscopy （XPS） and transmission electron microscopy （TEM） results, respectively. Atomic force microscopy （AFM） images show an extremely smooth surface obtained, with a root-mean-square （rms） roughness of about 0.16 nm for a 12 nm thick HfO2 film. The films exhibit the overall dielectric constant of 18.Chapter 4 includes the following four sections. Firstly, the thermal stability of HfO2 films on Si substrates. For the HfO2 films upon rapid temperature annealing （RTA） at 900℃ in 1 atm N2 for 30 s, both scan electron microscopy （SEM） and AFM results show a flat surface, and no voids or pits are found, indicating a good thermal stability of HfO2 films upon annealing in the N2 ambient. However, HfO2 films begin to decompose at about 750℃ under the ultrahigh vacuum （UHV） condition, as verified by synchrotron radiation photoemission spectroscopy （SRPES） results. Secondly, band offset of HfO2 films on Si（001）. The photoemission based method proposed by Kraut et al. is used to determine the band offset of HfO2 with Si. Accordingly, the valence band offset of HfO2 with Si is 3.46 eV. Thirdly, the band gap of HfO2. By using the O 1s energy loss spectrum, the band gap of HfO2 films is roughly measured to be about 5.0 eV. The relatively small value obtained mainly arises from the lower energy resolution due to the non-monochromatic Mg ka x-ray used. The last section concerns in situ photoemission study on initial growth of HfO2 films on Si（001） is also included in Chapter 4. Interfacial layers between HfO2 and the Si substrate are observed even for very thin HfO2 films and confirmed to be Si-rich

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