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Investigation on Mode Characteristics of High Power Broad Area Semiconductor Lasers

Author: WangYongLe
Tutor: GaoXin
School: Changchun University of Science and Technology
Course: Physical Electronics
Keywords: external-cavity semiconductor laser blazed grating mode characteristicwavelength tuning
CLC: TN248.4
Type: Master's thesis
Year: 2012
Downloads: 65
Quote: 0
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Abstract


This article describes the high-power semiconductor laser light oscillation conditions, the threshold current, output characteristics, model theory, thermal properties and dynamic characteristics of finite element analysis with ANSYS software thermodynamic wide strip of the thermal characteristics of semiconductor lasers are analyzed. Of the blazed grating external cavity semiconductor laser cavity length selection theory and analysis, while the strong feedback from the external cavity semiconductor lasers under the rate equation, analysis of external-cavity semiconductor lasers for mode selection, the pressure of narrow linewidth and frequency tuning. And semiconductor laser, collimating lens, and the cavity length gratings for analysis and selection. With ZEMAX software to simulate the beam collimation system by the divergence angle and spot size. In this theory, based on the type of blazed grating structures of the Littrow external cavity semiconductor laser system to achieve laser threshold current is reduced to0.24A0.16A,1.15A operating current, the output power of0.77W, the output beam divergence angle0.9mrad×1mrad, spot size of4mm×5mm, at room temperature25℃conditions, adjust the angle of gratings to achieve the tuning range of807nm～810nm.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser > Semiconductor lasers
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