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Growth and Characterization of GaN Films Using MOCVD Method

Author: QiuYingBin
Tutor: XiaoHongDi
School: Shandong University
Course: IC Engineering
Keywords: The non-polar GaN film Sapphire substrate MOCVD Structural properties Optical Properties
CLC: TN304.055
Type: Master's thesis
Year: 2011
Downloads: 150
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Abstract


As a typical representative of the third generation of semiconductor material , GaN has a wide band gap , a high thermal conductivity , is chemically stable , saturated electron drift velocity and other characteristics. Therefore, it can be widely used in high-brightness light-emitting diodes , blue lasers , UV detectors , high-power and high-temperature devices . Also, because the non - polar GaN material piezo polarization resulting nitride light-emitting device can eliminate radiation recombination efficiency is low and the emission wavelength blue shift . Therefore, Preparation of M -plane GaN materials , especially on non-polar GaN material has become a new research focus . Tentative growth on sapphire substrates by metal organic chemical vapor deposition (MOCVD) technology , and made ??some progress . The study was carried out for our next ( such as : semiconductor devices , nano- porous film , self-supported GaN film ) laid a solid experimental basis . First , using the MOCVD technique on a sapphire substrate by changing the growth temperature to grow the non-polar GaN film of the M-plane , through the study found that the optimum growth temperature of 1050 ° C ; Secondly, the use of the buffer layer and the growth layer is grown pressure changes in synchronization method growth pressure of 5 torr - 10 torr or affirmed . Through a scanning electron microscope ( SEM ) , photoluminescence (PL) spectrum and X-ray diffraction (XRD) found : 10 Torr Growth The highest quality of the GaN film , and the growth rate decreases again with the pressure respectively changing the method of growth pressure of the buffer layer and a growth layer , and further to determine the growth pressure of the buffer layer and the growth layer of the GaN film on the GaN film . The study found that: the higher the growth temperature of the buffer layer , the buffer layer growth pressure of 10 Torr , the growth layer growth pressure to 10 torr when the growth of the GaN film quality for the best . Finally, the use of the method of the changes in the temperature of the buffer layer growth , the growth temperature of the buffer layer of GaN films . The study found : the higher buffer layer growth temperature is conducive to the growth of non-polar GaN films .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > General issues > > Semiconductor thin film technology
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