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In the context of global economy rapid development of fossil energy sources are depleting and increasingly serious environmental problems , the current urgent solution to reduce the cost of solar cells , solar cell conversion efficiency , is given in the actual production feasibility measures . Solar both inexhaustible, the dual advantages become the first choice of the new energy and pollution-free . Solar cell materials , monocrystalline silicon solar cells the ratio of the largest minority carrier lifetime of single crystal silicon is a very important parameter affecting the efficiency of solar cells . The monocrystalline silicon minority carrier lifetime directly affect the level of monocrystalline silicon solar cell conversion efficiency , this paper on the basis of actual production through improved crystal growth process , to explore the influence of process parameters on the minority carrier lifetime , seek to most conducive to silicon single crystal growth process parameters . In this paper, the the KX260 crystal growth system equipped with 24 〃 hot field , loading 120kg, 5 different initial crucible bit of other process parameters the same crystal growth process , drawn 5 dicing , P -type , crystal orientation <100> , 2Ωcm resistivity silicon rods , and then analyze the the different initial crucible bit of the impact of the minority carrier lifetime . The experimental results obtained with the initial crucible bit enhance silicon rods minority carrier lifetime decreased . Then fixed crucible turn 8rpm, metacryst turn 6rpm , 10rpm , 14rpm , other process parameters the same as the crystal growth process , drawn three φ200mm, P type , crystal orientation < 100 > , resistivity 2Ωcm silicon rods . Last three silicon rods drawn minority carrier lifetime test , analysis of crystal growth of CRYSTALLIZATION turn on the minority carrier lifetime radial uniformity . The experimental results derived Crystal go the greater the rate , the better the uniformity . Based on the above , and taking into account the actual production needs to obtain the most suitable for the initial crystal growth crucible bit -70mm . Crystal to a 10 rpm, and most conducive to the integrity and uniformity of the crystal crucible into 8 rpm .
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