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The ZrO2Thin Films Prepared by RF Magnetron Sputtering and the Study of Properties

Author: WenJiYing
Tutor: GuiTaiLong
School: Harbin University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: RF magnetron sputtering zirconium oxide film film crystallinity transmission rate
CLC: TN304.055
Type: Master's thesis
Year: 2012
Downloads: 45
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Abstract


ZrO2thin films have a lot of good performance other metal oxide films of ⅣBfamily doesn’t have. Especially with some of the outstanding optical properties, suchas photon absorption rate very low among a wide spectrum, optical damage thresholdvery high and so on, ZrO2thin films have been widely used as the filters, thesspectroscopes, antireflection films and reflection increasing films and other opticalcomponents. In addition, because of other good properties, ZrO2thin films have alsobeen widely used in nanostructured materials, memory material, multilayercomposite material, microelectronics materials and other fields. So the preparation ofhigh quality ZrO2thin films and study of their properties is very practicallysignificant.In this paper, the ZrO2thin films were prepared on glass substrates with RFmagnetron sputtering method by the domestically produced OLED multi-coatingsystems through changing sputtering conditions many times such as total workinggas pressure, flow ratio of oxygen and argon and so on. The purity of ZrO2targetmaterial selected is99.9%. Finally we have deposited excellent preferred orientationof ZrO2thin film samples under the process conditions of the total gas pressure of1.0Pa, the substrate temperature of150℃and240W sputtering power. Then thedeposited high quality thin film samples were annealed respectively30min at700℃and800℃. The results of XRD analysis of the film surface unannealed and annealedat700℃and800℃scaned by D/Max-rB rotating anode X ray diffraction show thatZrO2thin film has its preferential growth direction, crystallizing better and crystalgrain bigger after annealing at800℃. The results of ZrO2film surface unannealed,annealed at700℃and800℃scaned by the Nano Scope III type atomic forcemicroscope show that ZrO2thin film surface annealed at700℃did not changesignificantly, grain size small.The surface annealed at800℃was relatively moresmooth, the grain size relatively bigger, grain recrystallizing and crystallinity better. U-3900type UV spectrophotometer is used to measure transmission rate of the filmsunannealed and annealed at800℃. From the transmission spectrum transmission rateof ZrO2thin films was relatively higher among the wavelength from250nm to600nm. In the wavelength of260nm, transmission rate curve appeared peak. Afterannealing, transmission rate increased. Using FEI scanning electron microscope forcomponent analysis, we found the ratio of O element and Zr element is close to2:1from the energy spectrum of samples. Through a series of experiments, we obtainoptimum process of ZrO2thin films prepared by RF magnetron sputtering, andimprove film transmittance after annealing at800℃.

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