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Solar energy is an unending supply of non-polluting energy.A batch of new film solarcell plants appear,that let me see the broad prospects of solar cell development.SnS is akind of important photoelectric conversion materials.Because of non-toxic and goodspectral matching performance with visible light,SnS has been attracting significantattention.Therefore,in this paper we take SnS as research objects,and conduct a systematicstudy of photoelectric performance factors.In this paper we take mixed solvent hot method,and PEG is used as surfactant.Singlefactor experiment is studied,and the influencing factors of SnS composition are the ratio ofthe reactants,reaction time,reaction temperature,surfactant consumption and category ofsurfactant,with the characterization of products and the determination of optimumsynthesis condition.The semiconducting ink is to blend SnS and PVB resin together, thatadding one or more of the semiconductor materials （ZnO2、 SnS）.We coat thesemiconducting ink on the flexible PET plastic film, observing the influence of Filmformation with different ratio,testing combination property of laminated film.Experimentalresults are as follows:（1）SnCl2·2H2O was used as Sn source,and （NH2）2CSwas used as S source.PEG wasused as surfactant.The best synthetic conditions were determined as:1:1.2ratio ofreactants,14h reaction time,190℃reaction temperature,adding0.5gPEG1500.（2）SnS was synthetized under the optimum condition, good crystallization property,spherical dispersion uniformity,3-6μm product grain size,Sn:S was close to1:1,pure phase;strong light absorption intensity of SnS,that have good spectral match with visible light insolar radiation.Excellent performance SnS with micron-crystallineare successfullysynthetized basically.（3）Unary SnS light absorptivity materials of flexible film were blended SnS underoptimum synthesis condition and PVB resin together,the more SnS,the more electricalconductivity of composite film,the stronger light absorption,that basic stability of propertywhen the addition SnS:PVB=3:1（mass ratio）,as the best filling quantity of SnS.（4）Considering the stability of film, the addition of semiconductor packing wassemiconductor:PVB=3:1（mass ratio）,when the binary/ternary compound light absorptivitymaterial were prepared adding SnO2、ZnS. （5）Binary compound light absorptivity materials were blended Unary SnS film andanother SnO2together, binary compound film has large better conductivity than Unary SnSfilm.The more SnO2,the more electrical conductivity of composite film;With the moreSnO2,the light absorption of film decrease continuously,which showed that SnS wasstronger than SoO2about the absorption to sunlight and SnS can be the subjectival lightabsorptivity material;SnS and SnO2grain disperse among the PVB resin,and whenSnS:SnO2=3:1semiconductor to add quantity,electrically conductive path was formedaround the homodisperse SnS.The best semiconductor to add quantity wasSnS:SnO2=3:1,then the best Combination property of Binary compound light absorptivitymaterials.Ternary compound light absorptivity materials further study on this basis.（6）Ternary compound light absorptivity materials were blended Binary compoundlight absorptivity materials and another ZnS together, the electrical conductivity was notvery well to contrast with SnS、 SnO2,consequently, adding ZnS not very well improveselectrical conductivity of composite film,so was the absorption to sunlight.However,ZnSwas the best about ultraviolet absorption to sunlight among three semiconductor materials.
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