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Controlled Growth of Silicon Nanowires by Solid-liquid-solid Method and Their Formed Mechanism
Author: FanZhiDong
Tutor: PengYingCai
School: Hebei University
Course: Microelectronics and Solid State Electronics
Keywords: Si nanowires Au catalytic Al catalytic Solid - liquid - solid growth mechanism Structural characterization Photoluminescence
CLC: TB383.1
Type: Master's thesis
Year: 2010
Downloads: 41
Quote: 0
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Abstract
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Au or Al film as the metal catalyst , based on the growth mechanism of the solid - liquid - solid ( SLS) , directly from N - (111 ) is grown on a single crystal Si substrate having a certain diameter , length, and density distribution of the Si nanowires (SiNWs ). Experimental study of the impact of process conditions on the Si nanowire growth catalyst layer thickness , growth temperature , gas flow rate and the growth time . Using a scanning electron microscope ( SEM ) , X - ray energy loss spectroscopy ( EDS ) and X - ray diffraction (XRD) on the Si nanowires , components, and the growth of crystal to characterize . Typical process conditions for the results show that the preparation of high density, large area and orderly distribution of Si nanowires : Au or Al film having a thickness of 5 -10nm , the growth temperature was 1100 ° C , N2 or Ar gas flow rate of 1.5 L / min and Growth time of 60min. Si nanowires diameter of approximately 50-300nm, a length of several microns to tens of microns , and even some of up to several millimeters . Xe lamp and the characteristics of the Si nanowires photoluminescence (PL) , measured at room temperature under conditions found in the 400-480nm wavelength range has a strong blue light emission with a peak wavelength of approximately 420nm . From the thermodynamics of the microstructure , the crystal growth kinetics angle qualitative analysis of the Au-Si eutectic droplet formation and growth mechanism of Si nanowires . The analysis pointed out that the process of Si nanowire growth mainly as follows: the deposition of a metal catalyst , the formation of droplets of the Au - Si eutectic , Si in the alloy segregation , nucleation and separating the precipitated and Si nanowires .
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