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Preparation and Technological Parameter Study of UC-Si:H Film by Hot-wire Chemical Vapor Deposition

Author: ZhangQingFeng
Tutor: LiuShiMin
School: Yanshan University
Course: Materials Science
Keywords: the hot wire chemical vapor deposition microcrystalline silicon grain size optical band gap high temperature oxidation
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Type: Master's thesis
Year: 2013
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Abstract


In these years, the nanotechnology is developing quickly, which make the nanometersilicon become the focus of research the novel property found in the nanometer silicon. Inthis paper, we deposited both a-Si thin film and uc-Si thin film in glass by the hot wirechemical vapor deposition to study the effect of different experiment condition to thin film.In order to make sure that whether the uc-Si thin film turn into n-Si/n-SiO2thin by hightemperature annealing under the glass transition temperature, we studied the property ofthe samples which are under annealing treatment.At first, the a-Si thin film and uc-Si thin film are prepared by the hot wire chemicalvapor deposition, and also the X-ray diffraction analysis, the SEM scanning andUltraviolet fluorescence spectrophotometer are used. During the experiment, thetechnological parameter such as the temperature of basement, the hydrogen concentrationand the interval of hot wire and basement are changed, to make sure that the effect of thedifferent technological parameter to the sample and make a further understanding of thethin film deposit-mechanism. After research, we find that the number of nanoparticlesilicon is increasing with the increasing of hydrogen concentration, but the huge quantityof hydrogen is disadvantage to the rate of deposition, and the effect is more obviousfollowing the increasing of hydrogen concentration; the temperature rising of basement isbeneficial for the formation of nanoparticle under300℃, but the higher is alsodisadvantage for the formation of nanoparticle; the same phenomenon appears along withthe changing of the interval of hot wire and basement. After the analysis of the opticalband gap, the value in film almost exceeds2eV.At last, in order to discuss and test whether is feasible to prepare the form of thesilicon nanocrystallites embedded in silicon dioxide under the glass transition temperature,the oxidation treatment is made at different temperature. The results show that the size ofmicrocrystalline silicon particles decreases and the optical band gap of thin film increasesby controlling the temperature and time of the heat treatment, which prove that the hightemperature annealing method is feasible to prepare the thin film of siliconnanocrystallites embedded in silicon dioxide, and the further research is needed for a more thoroughly understand. The other finding is that the form we need realizes more easilywhen the film thickness decreases.

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