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Research on SiC Semiconductor Materials Radiation-hardened Characteristics

Author: YangDeMing
Tutor: SongGuiCai; LiuDongPing
School: Changchun University of Science and Technology
Course: Physical Electronics
Keywords: PIP RF Discharge SiC semiconductor material SPM SEM
CLC: TN304.2
Type: Master's thesis
Year: 2014
Downloads: 5
Quote: 0
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Abstract


Silicon carbide (SiC) material is the third generation wide band gap semiconductor materials which developed after the first-generation element (Si) and the second generation of semiconductor materials (GaAs. etc). Its wide band gap, high thermal conductivity, high saturation electron velocity, high breakdown electric field such characteristics make it work at big power and high temperatures environment and strong irradiation field. In the paper, we have designed a Plasma Irradiation Platform(PIP). The plasma is generated in the vacuum chamber by the RF discharge. The advantage is what it can produce a uniform, high-density plasma. The sample was heated using laser heating technology to meet the required irradiation temperature. At the same time the sample is monitored by an infrared thermometer. The temperature of sample is guaranteed within the range of experimental requirements by changing the laser current. The plasma is accelerated by the negative the bias electric field and injects in the sample on the sample station with required energy.The n-type SiC semiconductor material is irradiated by PIP. We change the dose with the same temperature and energy. Irradiated sample is observed by Scanning Probe Microscopy and find the sample surface swelling gradually increased with increasing irradiation dose. The hardness of the irradiated silicon carbide material is analyzed by the scanning probe microscopy nano-indentation and nano-scratch mode. In addition the Conductive Atomic Force Microscopy is used to analysis the sample conductivity, and the results show that when the irradiation doses exceed1×1016ion/cm2. the semiconductor material loses its unique electrical properties, current-voltage curve becomes a straight line the material becomes ohm conductive properties. We analyze its optical properties by X-ray diffraction and conclude it.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor
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