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Laser interference nanolithography is one of the effective techniques to produce periodic, nanoscale patterns. This technology has the advantages of no mask, long focal depth, and high resolution, low cost. Because in the manufacture of industrial production, need a large area of corresponding structure of the material surface, therefore, need us to large areas of stitching.In this paper, analysis of the laser interference lithography, research and design of the system to achieve a large area scanning lithography patterns. Build a large area two-beam laser interference exposure splicing system, first use laser interference technology to produce single point of micro-structures and detection of the effective area, in order to manufacture a corresponding square aperture, and then by controlling a two-dimensional micro-displacement platform micro surface area structure stitching, complete measurement of splicing patterns by using optical microscope, and the splicing patterns are measured and analyzed.The experimental results show that, when the silicon surface splicing pitch D400m, double beam laser interferometer system splicing micro structure can make the silicon surface contact angle up to10°.
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