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Preparation and Ectrocaloric Effect of Preferred Oriented Barium Zirconium Titanate Thin Films

Author: XieBingLan
Tutor: WangFuPing
School: Harbin Institute of Technology
Course: Chemical Engineering and Technology
Keywords: BZT thin Preferred orientation Buffer layer Curie temperature Electrothermal effect
CLC: O484.1
Type: Master's thesis
Year: 2008
Downloads: 82
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Abstract


Prevent the atmospheric ozone layer has been increasingly serious damage in order to protect the ecological environment of the human exploration and development of freon - free refrigeration material is facing a major research topic in the scientific and technical community around the world . Effective ways depending on the refrigeration principle , the development of new types of coolers . The ferroelectric material depolarization under the adiabatic temperature decreases, the refrigerant can be realized . Barium zirconate titanate (BZT) is a ferroelectric material, and therefore , can use its ferroelectric refrigeration principle developed environmentally friendly BZT electric material . TG-DSC, IR, XRD and SEM characterization BZT powder , lay the foundation for the BZT thin film preparation process . By XRD analysis to determine the annealing temperature range of about 600 ° C to 900 ° C by TG-DSC and FTIR analysis to determine the film calcined temperature range of about 300 ° C to 500 ℃ . BZT powder sintered by SEM 850 ℃ analyzed , it was found that the BZT powder of relatively uniform particle size , the average particle diameter of about 50nm . BZT ferroelectric thin film was prepared using the spin coating method on the Pt (111) / Ti/SiO2/Si (100) . Study BZT thin films on the basis of the analysis of the powder , and give a reasonable interpretation , and the the BZT film orientation growth . BZT thin film characterization by XRD, SEM and AFM to study the influencing factors such as pre - firing process , annealing method , the annealing process and PZT (100) BZT thin buffer layer . The analysis shows that : to improve the crystallization of the film with the annealing temperature increases , the rapid thermal annealing at 850 ℃ incubated 10min , better film crystallinity can be obtained , with a (110) preferred orientation . A thin film prepared on the substrate without the buffer layer , however , its poor crystallinity , degree of orientation varies with temperature , mainly for the (110) orientation , and BZT thin film and the substrate between the diffusion ; introduction of the PZT (100) buffer layer film prepared from its crystallinity significantly improved the BZT film is a (100) preferred orientation , and the the BZT thin substrate binding , without diffusion phenomena . 750 ° C , 30min traditional annealed BZT thin variable temperature dielectric constant testing, tests show : With the increase in the Curie temperature and dielectric constant of the zirconium content reduced . Studies have shown that the heating effect of the different preferred orientation of BZT thin : preferred orientation the BZT thin electric temperature change impact electrothermal effect of preferred orientation of the prepared film max ΔT = 5.8K .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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