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GaN-based double heterojunction characteristics

Author: ZhengPengTian
Tutor: ZhangJinCheng
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: GaN Double heterojunction High electron mobility transistors Confinement of carriers Current collapse
CLC: TN304.2
Type: Master's thesis
Year: 2009
Downloads: 104
Quote: 2
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Abstract


Due to the excellent high-frequency power handling capacity, AlGaN / GaN high electron mobility transistors (HEMT) devices to become the next generation of RF and microwave power amplifier ideal successor. In recent years, with the quality of materials and device technology advances, AlGaN / GaN HEMT device performance has been increasing. At the same time, in order to meet the defense electronics and communications applications rapidly developing field of mobile communications needs, people have started to explore some of the more high-performance device structures, GaN-based double heterojunction HEMT devices is one of the more successful one. And compared to traditional single heterojunction double heterostructure HEMT devices have stronger confinement of carriers, which not only helps to improve carrier mobility and device turn-off characteristics, but also help to curb current collapse effect. Therefore, to double heterojunction HEMT GaN-based device research is very meaningful. This paper first GaN-based double heterostructure theory start by solving one-dimensional self-consistent Schrodinger / Poisson equation simulation of a variety of GaN-based double heterostructure energy band structure and carrier distribution characteristics. Simulation mainly considered different barrier layer structure on the back carrier distribution and restricted domain of influence. The simulation results of experimental research has played a good role in guiding. After this grown by MOCVD technique with different back-barrier layer structure AlGaN / GaN double heterostructure material. Through a variety of characterization methods, the crystalline quality of the material and electrical characteristics were compared. The results show that the material has good crystal quality and electrical properties. The back of the higher Al composition of the barrier layer will cause a larger interface mismatch, a thicker barrier layer of the back may cause lattice strain relaxation in both cases the double-heterostructure materials are the crystalline quality been adversely affected. Results from the Hall effect, since the introduction of the back of the barrier layer, an increase of the material alloy disorder scattering and interface roughness scattering, and thus double-hetero structure and 2DEG mobility not significantly increased. In addition, the paper through Mercury probe CV testing on AlGaN / GaN double heterostructure material carrier distribution characteristics were studied and achieved carrier distribution and the main channel carrier confinement barrier layer of Al with back composition and thickness changes in the law, these rules and this is very consistent with the results of theoretical calculations to verify the correctness of theoretical calculations. Finally, through the device fabrication and testing of AlGaN / GaN HEMT devices double heterojunction DC output characteristics, transfer characteristics, RF small-signal characteristics and the current collapse effect for a more in-depth study. The results show that the performance of the device is very good DC characteristics and RF small-signal characteristics. In addition, by a very low concentration of carriers of parasitic channels, the device transconductance curve in the behavior of the weak dual channel; AlGaN / GaN HEMT devices in the double heterostructure the strong confinement of carriers weakened the carrier mobility of the carrier density dependence of the surface, and thus in a very wide range of gate voltage bias, the device still maintained a high transconductance; and traditional compared to single heterojunction HEMT devices , since the main channel carrier confinement enhancements, AlGaN / GaN HEMT device double heterostructure less current collapse occurs.

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